BSM35GD120DN2E3224BOSA1

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Application Field and Working Principle of BSM35GD120DN2E3224BOSA1

BSM35GD120DN2E3224BOSA1 is a insulated gate bipolar transistor (IGBT) module from SEMIKRON. It belongs to the SEMIKRON family of SKiiP products. As one of these products, it contains four IGBTs and one fast free wheeling diode. The module measures 186x80x80mm. The IGBTs have a key position 1U compatible with SKiiP modules, which allow them to be interconnected next to each other in a modular system.

BSM35GD120DN2E3224BOSA1 is a high power semiconductor component designed for use in a wide range of applications including motor control, inverter systems, drives, welding systems and UPS (uninterruptible power supplies). The device is suitable for medium and high power switching applications where the switching of high voltage and high current is necessary.

BSM35GD120DN2E3224BOSA1 consists of four IGBTs and one bridge rectifier in a single package. Each IGBT has two emitters (the inversion layer gate) connected to a double-sided gate and two collectors connected to a double-sided drain. This structure allows the IGBTs to control the current between the two collectors (drain and source) with a low gate to collector voltage. The fast free wheeling diode can be used to reverse the current between the drain and source of the IGBTs, which makes switching more efficient.

The core of the BSM35GD120DN2E3224BOSA1 is the IGBTs and their working principles. IGBTs are basically a combination of a MOSFET (metal oxide semiconductor field effect transistor) and a bipolar junction transistor. IGBTs have three terminals, a gate, a collector and an emitter, with an electrical field created between the gate and the collector. The voltage applied to the gate affects the current flowing between the collector and the emitter and can control the current. In its most basic form, an IGBT can be used as a switch.

In addition to the voltage applied to the gate, IGBTs can also be activated by current. This is known as the “Miller Plateau” effect, which is a phenomenon where a constant current at low voltages applied across the gate and collector will cause a depletion of the channel and will turn on the IGBT. It is important to note that the Miller Plateau effect is dependent on the temperature, as it is temperature dependent.

When an IGBT is turned on, the current in the channel is determined by the applied gate voltage and collector current. The IGBTs can control the current between the two collectors (drain and source) with a low gate to collector voltage. The voltage gain of an IGBT is equal to the amount of voltage between the gate and the collector divided by the current flowing through the collector.

BSM35GD120DN2E3224BOSA1 is a power semiconductor module whose main components are the four IGBTs and the bridge rectifier. The module is used in a wide range of applications where switching high voltage and high current is necessary. The IGBTs are the core of the module and their working principle is based on the application of an electrical field between the gate and the collector which is determined by a voltage applied to the gate and by the current flowing through the collector. The Miller Plateau effect can also be used to turn on the IGBTs and the voltage gain of an IGBT is equal to the amount of voltage between the gate and the collector divided by the current flowing through the collector.

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