Allicdata Part #: | BSM35GP120GBOSA1-ND |
Manufacturer Part#: |
BSM35GP120GBOSA1 |
Price: | $ 109.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 LOW POWER ECONO3-3 |
More Detail: | IGBT Module Full Bridge 1200V 45A 230W Chassis Mo... |
DataSheet: | BSM35GP120GBOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 99.27750 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 45A |
Power - Max: | 230W |
Vce(on) (Max) @ Vge, Ic: | 2.85V @ 15V, 35A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 1.5nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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BSM35GP120GBOSA1 application field and working principle
The BSM35GP120GBOSA1 is an insulated-gate bipolar transistor (IGBT) module manufactured by Infineon that can be used in a variety of applications. This type of IGBT is a three-terminal semiconductor device with a voltage rating of 1200 volts. The BSM35GP120GBOSA1 can handle high frequencies and high currents, making it suitable for induction heating and motor drives. Additionally, the use of IGBTs in this module helps reduce the noise levels that can be generated when operating at high frequencies.
The BSM35GP120GBOSA1 module is composed of a six-pack of IGBTs combined with a matched freewheeling diode. This combination allows for higher frequency switching and higher efficiency due to lower voltage losses. The IGBTs have a peak repetition rate of up to 10kHz and a short circuiting rating of up to 8kA at 25°C Ambient Temperature. Additionally, the peak on-state current of the IGBTs can reach up to 115A.
The operating principle of an IGBT is closely related to that of a bipolar junction transistor (BJT). The IGBT is a voltage-controlled device in which current flows from the collector to the emitter only when the voltage at the gate is higher than the voltage at the emitter. The current flow is blocked when the voltage at the gate is lower than the voltage at the emitter. This allows the IGBT to be used in applications that require switching of high power and current with precision.
BSM35GP120GBOSA1 modules are used in a variety of applications, including high-frequency welding and inductive heating. Additionally, it is widely used in motor drives, UPS, and power supplies. Its high peak current rating of up to 115A and its low on-state voltage drop of 1.5V make it an ideal choice for high-power applications. The module also has a very low switching loss of less than 0.2 Joules, which allows for higher efficiency and less power usage.
In conclusion, the BSM35GP120GBOSA1 is an IGBT module manufactured by Infineon that is suitable for a variety of applications. It has a peak on-state current of up to 115A, a peak repetition rate of 10kHz, and a short-circuiting rating of 8kA at 25 °C ambience. Additionally, it has a low on-state voltage drop of 1.5V and low switching loss of less than 0.2 Joules. The BSM35GP120GBOSA1 is used in applications such as welding, inductive heating, motor drives, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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