BSO200N03 Discrete Semiconductor Products |
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Allicdata Part #: | BSO200N03INTR-ND |
Manufacturer Part#: |
BSO200N03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 6.6A 8DSO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.4W Surf... |
DataSheet: | BSO200N03 Datasheet/PDF |
Quantity: | 1000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 7.9A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 13µA |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1010pF @ 15V |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | PG-DSO-8 |
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BSO200N03 application field and working principle
BSO200N03 is a fast switching, high-efficiency, and high-temperature Power MOSFET array with over-voltage protection, ESD protection, and over-temperature protection. It is widely used in consumer electronics, mobile and medical products, automotive electronics, air conditioning systems, power supplies, and other consumer applications.
The BSO200N03 MOSFET array is a four-channel array package with four independent Power MOSFETs inside. Each MOSFET is capable of providing up to 50A of continuous current, and can operate at peak power levels of up to 250W. This makes it ideal for power-hungry applications, such as power supplies and high-performance audio systems.
The built-in over-voltage protection feature of the BSO200N03 keeps current within safe levels, thus preventing long-term equipment damage. On the other hand, its low rDS(on) low-resistance characteristics enable faster switching times, allowing higher energy efficiency and power conservation. The ESD protection feature also adds to the durability of the device, by making it more resistant to Electro Static Discharges.
The MOSFET array of the BSO200N03 works on the principles of applied voltage, current conduction, and the induced electric field. The electric field generated between a source and a drain when a voltage is applied across it, is proportional to the voltage. As the voltage is increased, the electric field increases and this causes the current to flow from source to drain. The current is controlled by the voltage and the resistance of the channel between the source and drain.
Also, the BSO200N03 has a built-in over-temperature protection feature, which makes it resistant to temperature fluctuations and ensures longer device life. This is done by monitoring the junction temperature and shutting off the device whenever it reaches the specified upper limit. Thus, even during extended use in harsh environments, this feature ensures longer device life.
In conclusion, the BSO200N03 MOSFET array can be used in many different applications, from consumer electronics to automotive electronics and power supplies. Its fast switching, high-efficiency, and over-voltage, ESD and over-temperature protection characteristics make it an ideal choice for many power-hungry applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BSO220N03MSGXUMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 7A 8DSON-... |
BSO200N03 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 30V 6.6A 8DS... |
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