BSO200P03SHXUMA1

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BSO200P03SHXUMA1 is a 60V Single N-Channel Power MOSFET designed for a variety of applications. With a low on-resistance, a high blocking voltage and an extended drain current of 62A, the BSO200P03SHXUMA1 is an ideal solution for power management applications in automotive, industrial and consumer applications.

Application Field

The BSO200P03SHXUMA1 is designed for applications which require high current densities. This device is well-suited for use in a variety of automotive applications, including on-board charging, heated mirrors, fuel pumps and active grilles. In the industrial sector, BSO200P03SHXUMA1 can be used in brushless DC motor control, robotics and robotics-related control applications. In consumer electronics, this device can be used in streaming audio/video devices such as televisions, monitors and set-top boxes.

Working Principle

The operation of the BSO200P03SHXUMA1 is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) structure. This transistor structure employs a heavily doped drain region which is connected to the MOSFET’s gate contacts. When a voltage is applied to this drain region, electrons from the substrate are attracted toward the positively charged gate contacts and cause a depletion layer to form in the drain region. This depletion layer increases the transistor’s resistance, thus reducing the voltage across the drain region and allowing the current flow to be controlled. The BSO200P03SHXUMA1’s low on-resistance and high blocking voltage ensure excellent performance in applications which require high current densities.

The BSO200P03SHXUMA1 is a completely self-protected device, capable of handling up to 60V and 62A of sustained drain current. Its low on-resistance of only 22mΩ makes it an ideal solution for applications which require high efficiency and low power dissipation. Additionally, the BSO200P03SHXUMA1 features an extended gate voltage range of -3.5V to 6V, which ensures reliable switching for a wide variety of conditions.

The BSO200P03SHXUMA1 is designed with a highly efficient gate structure to ensure maximum performance, while still achieving low power consumption. Its integrated gate-charge circuit ensures stable switching and prevents mistakenly triggered circuits due to shorted gate connections. The gate-protect structure also prevents unexpected gate stress which may occur due to voltage transients.

The BSO200P03SHXUMA1 is a versatile MOSFET capable of meeting the requirements for many applications, from automotive, industrial and consumer electronics sectors. Its low on-resistance and high blocking voltage, combined with an extended operating temperature range, make it an ideal solution for a wide range of power management applications.

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