| Allicdata Part #: | BSO207PNTMA1TR-ND |
| Manufacturer Part#: |
BSO207PNTMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2P-CH 20V 5.7A 8SOIC |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 5.7A 2W Surfac... |
| DataSheet: |  BSO207PNTMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 40µA |
| Base Part Number: | BSO207 |
| Supplier Device Package: | P-DSO-8 |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 2W |
| Input Capacitance (Ciss) (Max) @ Vds: | 1013pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 23.4nC @ 4.5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 5.7A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 5.7A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 P-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The BSO207PNTMA1 is a P-Channel enhancement mode field-effect transistor array. It contains two independent N-channel MOSFETs integrated into one device. The BSO207PNTMA1 uses a monolithic double-diffused structure and offers high gain, low impedance, and high input impedance in an ultra-compact size. The BSO207PNTMA1 is designed for applications such as switching, amplifying, and driving. This device is available in both surface mount and through-hole packages.
The application field of the BSO207PNTMA1 encompasses a wide range of areas. It is suitable for use in analogue and digital circuits including power management, motor control, lighting control, and sensing applications. The device has high input impedance and can be used in audio, television, switching, and logic-level functions. It is also suitable for use in data acquisition systems, power supplies, and RF circuits.
The BSO207PNTMA1 is a versatile device with a number of different working principles. The most common operating principle is the enhancement mode. In this mode, the gate voltage is higher than the source voltage, allowing an inversion layer to be formed. This inversion layer increases the current flow from the drain to the source. Another useful principle is the dual-gate operation. In this mode, the gate voltage is applied to both the N-channel MOSFETs simultaneously. This increases the input impedance and allows for more efficient operation.
The BSO207PNTMA1 is an ideal device for use in a variety of applications. It has high gain, low impedance, and high input impedance in an ultra-compact size. It is suitable for use in analogue and digital circuits, and can be used in audio, television, switching, and logic-level functions. The two independent N-channel MOSFETs provide versatile operation, allowing the user to optimize the performance of the device.
The specific data is subject to PDF, and the above content is for reference
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