BSO200N03S Discrete Semiconductor Products

The BSO200N03S is a single enhancement-mode insulated-gate bipolar transistor (IGBT) module. It utilizes a proprietary geometry, low on-resistance, high-power monolithic spring-loaded DC-DC converter technology, to provide superior performance in the most rigorous applications. The BSO200N03S IGBT module offers superior transient and thermal performance, making it ideal for a wide range of switch mode applications where high efficiency and power density are important.

BSO200N03S application fields include high current switch, sign-on/sign-off switching, telecom switching, inverter, chopper, DC motor driver, AC motor drives, brushless DC motor controllers, DC/AC inverters, audio amplifiers, and appliance and industrial applications. When compared to conventional bipolar transistor devices, the BSO200N03S is uniquely suited for low loss control of multi-MHz switching signals.

The BSO200N03S IGBT module works as a easily controlled power switch, utilizing a low on-resistance channel, when triggered by an insulated gate. This low on-resistance allows for fast and efficient switching with minimal power loss. The IGBT module can withstand high temperatures with a robust gate oxide and is designed to minimize switching losses and provide superior surge characteristics, making it an ideal power switch for applications with demanding switching requirements.

The BSO200N03S IGBT module has a built-in ESD protection and is designed to operate at higher voltages than a typical MOSFET does. It is manufactured with specialized internal circuitry that senses the device operational status and is capable of detecting excessive current and voltage levels when triggered, turning off the device to protect it from short-circuit or over-voltage conditions.

The BSO200N03S IGBT module features a monolithic structure built on a proprietary ultra-high performance substrate. This structure offers superior power performance and thermal as well as electrical reliability. Its construction also enables higher operating temperature, enabling the use of the IGBT module in high temperature applications, such as thermal transfer applications, without overstress damage.

The BSO200N03S IGBT module has a wide range of physical and electrical characteristics, making it ideal for applications ranging from low power control to high power switching. It features an on-resistance of 3.3mΩ and is rated up to 200A and 600V. The BSO200N03S IGBT module has high-speed switching characteristics and supports high-power applications up to 450kHz switching rate. The IGBT module uses a spring-loaded contact technology with a high insulation rating for cost-effectiveness in demanding high performance applications.

In conclusion, the BSO200N03S IGBT module is a powerful, high-speed, and cost-effective insulation gate bipolar transistor (IGBT) module. This module offers superior performance in high current switch, sign-on/signoff switching, telecom switching, inverter, chopper, DC motor driver, AC motor drives, brushless DC motor controllers, DC/AC inverters, audio amplifiers, and appliance and industrial applications. Its features such as low on-resistance and ESD protection, high operating temperature, wide range of physical and electrical characteristics, allows it to be used in a variety of applications.