BSO203SPHXUMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSO203SPHXUMA1TR-ND |
Manufacturer Part#: |
BSO203SPHXUMA1 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 7A 8DSO |
More Detail: | P-Channel 20V 7A (Ta) 1.6W (Ta) Surface Mount P-DS... |
DataSheet: | BSO203SPHXUMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.34967 |
Vgs(th) (Max) @ Id: | 1.2V @ 100µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | P-DSO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 4.5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 8.9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSO203SPHXUMA1 application field and working principle
BSO203SPHXUMA1 is a single-pole, three-throw field-effect transistor (FET) device commonly used in amplifiers, modulators, and normal discretes. It is a type of transistor used to amplify or switch electronic signals and electrical power. The BSO203SPHXUMA1 has three terminals, known as the source, gate, and drain.
Application Fields
The BSO203SPHXUMA1 transistor finds application in two main areas: switching applications where the drain-source resistance is used to control current, and amplifying applications where the transconductance is used to control voltage gain.
The BSO203SPHXUMA1 is commonly used in digital switching circuits (such as computer memory and logic circuits), analog switching circuits (such as power transistor drivers), clock signals, linear amplifiers, analog multipliers, and RF amplifiers. Its low-power operation (under 5V) and low gate charge make it ideal for use in a variety of small to medium power applications.
Working Principle
Like any FET device, the BSO203SPHXUMA1 operates by creating a conducting channel between the source and drain, which is controlled by the voltage at the gate. When the gate voltage is high enough, the FET turns on and the resistance between the source and drain is low (the device is conducting). When the gate voltage is low, the FET turns off and the resistance between the source and drain is high (the device is non-conducting).
The transconductance of an FET is a measure of the rate of change of drain current with respect to gate voltage. On a graph, this would be the slope of the drain current versus gate voltage curve. As the gate voltage increases, the drain current increases. The transconductance is the ratio of this change in drain current to the unit change in gate voltage. It is usually designated as gm and measured in siemens (S).
The drain-source resistance (RDS) is simply the resistance between the source and drain of the FET. RDS of the BSO203SPHXUMA1 is typically low (on the order of 0.23 Ohms). This low resistance allows the FET device to have high switching speed and high average current capabilities.
Conclusion
The BSO203SPHXUMA1 transistor is a single-pole, three-throw field-effect transistor device commonly used in amplifiers, modulators, and normal discretes. Its low-power operation, low gate charge, and low RDS make it an ideal choice for a variety of small to medium power applications. Its transconductance and RDS allow it to be used for both switching and amplifying applications.
The specific data is subject to PDF, and the above content is for reference
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