BSO201SPNTMA1 Discrete Semiconductor Products

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Bosch Sensortec BSO201SPNTMA1 is a single-channel input, low power, low noise FET device designed for various applications in audio and industrial sectors. It is available in both surface-mount and through-hole configuration. This device has a low power consumption of just 0.15 mA and a maximum input voltage of up to 10 volts. It is suitable for different applications, such as automotive audio, home audio and industrial sound systems.

This FET is based on a single-gate control style with a junction body field effect. It is designed to reduce noise by minimizing its harmonic distortion, thanks to its floating-gate technology. Its gate voltage range is 3.2 V to 6 V, while its maximum drain-source on-resistance is 2 ohms. Its gate input resistance is very high, at 7.8 Gohms.

The BSO201SPNTMA1 is a general-purpose device which can be used in a wide range of applications, such as in audio applications, including active communication bases, infrared remote control systems and headphone amplifiers. This device has a wide supply voltage range between 5.5 and 10 V, and a high output current of up to 5 A and low channel-to-channel capacitance of 20 pF. In addition, its two protection functions - short circuit protection and reverse connection protection - ensure high reliability.

The working principle of the BSO201SPNTMA1 is based on the majority carrier concept. It uses a gate voltage to modulate the charge carriers which flow through the device, thus changing the device\'s resistance. Because it has a large input impedance, it is effective in changing the output current with an applied gate voltage. This, in turn, affects the voltage drop across the device and results in either decreasing or increasing the output current. By using this device, the output current can be effectively controlled and/or regulated.

To sum up, the BSO201SPNTMA1 is a highly versatile, single-channel low noise FET device specifically designed for automotive, home audio and industrial applications. It is characterized by a low power consumption and a high level of control and reliability. This device is based on the majority carrier concept and uses a gate voltage to control the flow of charge carriers and thereby changes the device\'s resistance.

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