BSO203PNTMA1 Discrete Semiconductor Products

Series:	OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	8.2A
Rds On (Max) @ Id, Vgs:	21 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	48.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	2242pF @ 15V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	P-DSO-8

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BSO203PNTMA1 is a low off state leakage, high speed MOSFET array which is manufactured by Electronic and Electrical Solutions (EES). This product is mainly used in switching regulator applications. It offers excellent performance in the areas of temperature sensing, power measurement and control, as well as very low static and dynamic power consumption.The array is a monolithic silicon device based on metal-oxide-semiconductor field-effect transistor (MOSFET) technology. It consists of two complementary pairs of N-channel and P-channel MOSFETs, with each pair having its own source, drain and gate. The two pairs are connected in parallel, which allows them to share the same characteristics. This allows the array to provide a wide range of voltages and currents, with a low area and thermal resistance.The working principle of the array lies in the principle of direct energy transfer. The energy is directly transferred from the positive terminal to the negative terminal of the array. The MOSFETs in the array block the source and drain currents in both directions. During normal operation, the MOSFETs in the array are conducting due to the electric field generated by the gate signals. The amount of current flowing through the array is proportional to the voltage applied on the gate.The BSO203PNTMA1 is one of the most advanced MOSFET arrays available on the market today. It is ideal for use in a wide range of applications such as switching regulators, temperature sensing, and power metering. The array provides excellent performance in terms of low static and dynamic power consumption, high switching speed, low off-state leakage, and low thermal resistance. The array is a monolithic silicon device that is based on MOSFET technology, providing superior performance in a small footprint.The BSO203PNTMA1 MOSFET array is an ideal choice for applications where fast switching, low off-state leakage, and low thermal resistance are required. It is also suitable for applications requiring low static and dynamic power consumption. Its advanced features, including the use of MOSFET technology, provide superior performance that can be tailored to specific needs. In addition, the array offers low area, low thermal resistance, and high speed. The MOSFET array is available in various package types, making it suitable for a wide range of applications.The BSO203PNTMA1 is a highly advanced and reliable MOSFET array designed to provide excellent performance in a wide range of applications. It offers low off-state leakage, high speed, low static and dynamic power consumption, and high switching speed. It is available in various package types, making it suitable for various applications requiring high performance and low cost.

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