Allicdata Part #: | 497-7214-5-ND |
Manufacturer Part#: |
BUV20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 125V 50A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN 125V 50A 8MHz 250W Ch... |
DataSheet: | BUV20 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50A |
Voltage - Collector Emitter Breakdown (Max): | 125V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 5A, 50A |
Current - Collector Cutoff (Max): | 3mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 25A, 2V |
Power - Max: | 250W |
Frequency - Transition: | 8MHz |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-3 |
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The BUV20 is a type of bipolar junction transistor (BJT) designed specifically for medium-power switching applications. This medium-power BJT is designed to provide nearly twice the power handling capacity of standard BJT transistors and is used in a wide variety of medium-power switching applications such as power supplies, DC-DC converters, LED illumination and audio amplifiers. The BUV20 provides high gain, low saturation voltage, and low-power loss, making it a suitable choice for medium-power switching applications.
A bipolar junction transistor is a type of electronic component that combines two types of semiconductor materials, a p-type and an n-type, to amplify and/or switch an electrical signal. In simple terms, the switching function of a bipolar junction transistor can be compared to that of a fast-acting electrical switch. The PNP and NPN designs are the two most commonly used types of BJTs. The PNP BJT is designed to require a negative voltage to switch the transistor on. The NPN BJT, which is the BUV20, is designed to require a positive voltage to switch it on.
The BUV20 is a NPN medium power transistor designed specifically for switching applications, and is capable of switching electrical loads up to 200V and 3A. The BUV20 is designed to impart low input bias currents and provide high switching speed and low power dissipation. The transistor’s small footprints, rugged construction and low power losses make it a suitable choice for high-density switching applications.
The working principle of the BUV20 is relatively simple, like all other bipolar junction transistors. When an appropriate voltage is applied to the base of the transistor, it acts as a gate, allowing current to flow between the emitter and collector. This current, which is amplified by the transistor’s gain, controls the current flowing through usually the load circuit. Thus, the working principle of the BUV20 is to act as an amplifier, switching, and controlling an electrical signal.
The BUV20 is a reliable medium-power switching transistor, offering excellent switching capability, low power losses, and a relatively small footprint for easy packaging. Its low saturation voltage allows for fast switching speeds. The BUV20 is used in a variety of applications including DC-DC converters, power supplies, and LED illumination circuits. It is an excellent choice for high-density, medium-power switching applications where reliability and high efficiency are desired.
The specific data is subject to PDF, and the above content is for reference
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