BUV21G

Series:	SWITCHMODE™
Packaging:	Tray
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	200V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 3A, 25A
Current - Collector Cutoff (Max):	3mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 12A, 2V
Power - Max:	250W
Frequency - Transition:	8MHz
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AE
Supplier Device Package:	TO-3

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IntroductionBUV21G is a type of bipolar junction diode (BJT) commonly used for a number of applications in the electronics industry. BUV21G has a wide variety of uses and is a popular choice for power applications. This article will discuss the application fields and working principles of BUV21G transistors.Application FieldsBUV21G transistors are used for a variety of applications, including analog and digital circuits. In analog circuits, BUV21G is used for small-signal amplifiers and switching applications. It is also popular for high-power applications such as current-sensing and motor control.The most common application of BUV21G is in high voltage switching. It is often used in power circuits as it is a reliable and efficient method of controlling the power supply. It is also used in power conditioning applications, such as DC-DC converters, soft starters, and other power electronics applications.In digital applications, BUV21G is often used as a digital switch. It is used in high-speed and low-power logic circuits, such as decoders, multiplexers, and logic gates.Working Principle BUV21G transistors are BJTs, which stands for bipolar junction transistors. BJTs consist of three layers of semiconductor material, with a base region in the middle. These transistors work by modulating the current flow through the base region to control the current through the collector and emitter regions. In operation, current is applied to the base region, which creates a voltage across it. This voltage creates a depletion region on either side of the base region, meaning that there is no current flowing through it. The current flow through the collector and emitter regions is determined by the voltage applied to the base region, and can be manipulated by changing the base current. In BUV21G transistors, the voltage across the base region is typically much higher than other types of BJTs, meaning that it can handle higher current and power levels. By altering the base current, the collector and emitter current can be controlled with high precision. Conclusion BUV21G is a type of bipolar junction diode (BJT) commonly used for a variety of applications in the electronics industry. It is popular for high-power applications such as current-sensing and motor control, as well as high voltage switching and power electronics applications. Its working principle is based on modulating the current flow through the base and collector-emitter regions by altering the base current.

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