BUV26

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	90V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1.2A, 12A
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Power - Max:	85W
Frequency - Transition:	--
Operating Temperature:	175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Base Part Number:	BUV26

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Introduction

The BUV26 is a single bipolar junction transistor (BJT), commonly used in small- and medium-power amplifier circuits. It is a robust, reliable, and inexpensive component suitable for many applications. This article discusses the application fields and working principle of the BUV26 BJT.

Application Fields

The BUV26 BJT is most commonly used in amplifier circuits due to its robust design, wide voltage range, and current handling capacity. It is used in small- and medium-power audio amplifiers, as well as for power amplification and switching applications. In audio amplifiers, the BJT provides sufficient gain for audio signals, with both single-ended and push-pull circuits. In power switching applications, the BJT is used to drive relays, energize solenoids and motors, control current, and other uses. The BUV26 BJT is also a popular choice for RF and RF-IF applications.

Working Principle

The BUV26 BJT is constructed of three layers of semiconductor material—an emitter, a base, and a collector. An electric current is applied to the emitter-base junction. If the current is sufficiently large, it causes an avalanche of electrons to flow through the base. This, in turn, causes a much larger current to flow between the collector and emitter. This current is significantly larger than the current applied to the emitter-base junction, leading to the amplification of the applied signal. The gain of the BJT depends on the current flowing through the base and the resistance of the other components in the circuit.

Conclusion

The BUV26 BJT is a robust and reliable single bipolar junction transistor that is suitable for many applications. It is commonly used in amplifiers, RF and RF-IF applications, as well as for power switching applications. It operates by amplifying the applied current through an avalanche effect at the emitter-base junction. With its low cost and versatility, the BUV26 is a popular choice for many technologists.

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