Allicdata Part #: | BUV27G-ND |
Manufacturer Part#: |
BUV27G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 120V 12A TO-220AB |
More Detail: | Bipolar (BJT) Transistor NPN 120V 12A 70W Through... |
DataSheet: | BUV27G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 800mA, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | BUV27 |
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The BUV27G is a NPN silicon epitaxial planar transistor with low collector-to-base capacitance. It is specifically designed with low noise, low power consumption, and wide frequency response. The BUV27G is suitable for applications such as amplifiers, active filters, and various circuits requiring low noise.
The BUV27G has three terminal pins, which are the emitter, the base, and the collector. The base of the transistor allows current to flow from the emitter to the collector when the base is turned on. The width of the base allows current to the collector with comparatively less resistance than could be achieved with a resistor. The overall power of the transistor is determined by the current flow from the collector to the emitter.
The working principle of the BUV27G is simple. When the base voltage is increased, more current flows through the collector. This higher current causes a voltage drop across the collector and emitter terminals, which in turn increases the current gain of the device. This current gain, or UCE, is determined by the amplification factor of the transistor. The amplification factor, also known as Beta, is the ratio of the collector current to the base current.
The BUV27G is typically used in applications requiring low noise and low power consumption. It is frequently used in amplifiers, oscillators, active filters, and power supplies. The BUV27G is also used in circuits requiring high frequency operations, due to its low noise characteristic. This makes it suitable for applications such as RF receivers, RF equipment, and broadband communications.
The BUV27G can also be used in high speed switching applications such as relays, pulsewidth modulators, and timers. The BUV27G is designed for a maximum collector-base voltage of 60V, a maximum collector current of 1A, and a maximum emitter-base voltage of 6V. The BUV27G is typically manufactured in NPN bipolar technology.
The BUV27G is a reliable and cost-effective single-transistor device, providing excellent performance and low noise characteristics. It is suitable for a wide range of applications and can be used in a variety of applications requiring low power consumption and high frequency response.
The specific data is subject to PDF, and the above content is for reference
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