BUV22G Allicdata Electronics
Allicdata Part #:

BUV22GOS-NDOS-ND

Manufacturer Part#:

BUV22G

Price: $ 7.76
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 250V 40A TO-3
More Detail: Bipolar (BJT) Transistor NPN 250V 40A 8MHz 250W Th...
DataSheet: BUV22G datasheetBUV22G Datasheet/PDF
Quantity: 12
1 +: $ 7.05600
10 +: $ 6.37434
100 +: $ 5.27745
500 +: $ 4.59551
Stock 12Can Ship Immediately
$ 7.76
Specifications
Series: SWITCHMODE™
Packaging: Tray 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5A, 20A
Current - Collector Cutoff (Max): 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Power - Max: 250W
Frequency - Transition: 8MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-3
Description

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BUV22G is a kind of single, bipolar junction transistor (BJT). It is the perfect component for general amplification and switching applications, because of its excellent performance. This powerful transistor can execute an impressive array of tasks at a very low cost.

BUV22G is an NPN transistor, which means that it has an n-type semiconductor sandwiched between two opposite p-type semiconductors. Its structure is made up of three layers or junctions, which helps it to have a highly stable energy state. This property enables it to withstand overvoltage and current fluctuations while maintaining a high degree of accuracy.

BUV22G has low-noise, high-frequency performance, making it ideal for amplifying RF signals. It has low power consumption, which is especially useful for battery-powered applications. The device has a high packing density, which allows for the placement of multiple components in a very limited space. It also has a wide range of operating temperatures so it can be used in extreme environmental conditions.

The working principle of BUV22G is based on the transfer of electrons from the collector to the emitter. When current is applied to the base, a depletion layer is formed, allowing the voltage to pass through to the collector. This voltage change at the collector causes current to flow, which results in electron amplification at the emitter. The amplifier then sends the signal to the output.

BUV22G can be used in various applications and areas, such as analog and digital electronics, signal and audio processing, automotive electronics, consumer electronics, and communication. It is also used in consumer and industrial applications such as computers, television, HVAC systems, and robotics.

In summary, BUV22G is an effective single, bipolar junction transistor (BJT). It offers excellent performance in terms of low noise, high-frequency, low power consumption, and wide operating temperature range. It is ideal for general amplification and switching applications. The device can be operated in extreme environmental conditions and can work at a wide range of high frequencies. Its versatile design makes it suitable for a variety of applications, such as analog and digital electronics, signal and audio processing, automotive electronics, consumer electronics, and communication.

The specific data is subject to PDF, and the above content is for reference

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