Allicdata Part #: | 497-7216-5-ND |
Manufacturer Part#: |
BUV27 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 120V 12A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 12A 85W Through... |
DataSheet: | BUV27 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 800mA, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | 85W |
Frequency - Transition: | -- |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | BUV27 |
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BUV27 application field and working principle
BUV27 is a type of bipolar single-transistor, which is widely used in audio power amplifiers, switching circuits, and low noise amplifiers. Wide band amplifiers, pulse height modulation circuits and other circuits also use BUV27 transistor. The working principle is that when voltage is applied on the base of BUV27, current will flow from the collector to the emitter, and the collector current of BUV27 is controlled by the current flowing through the base.
BUV27 is composed of two p-type and two n-type semiconductor materials, and its internal structure is composed of three layers of semiconductor materials. It is a kind of junction transistor. The function of the two p-type semiconductor materials is to provide hole carriers, and the negative semiconductor material is to supply electron carrier, so that the two can exchange electron with each other to form electric conduction channel.
The primary characteristic of the BUV27 is the gain bandwidth product (fT). The gain bandwidth product represents the highest frequency at which the transistor can produce its maximum voltage gain, and it can be used to predict the switching speed of the transistor. When the voltage on the collector of BUV27 drops to zero, the transistor is in cut-off state, at this time, no current will flow through the collector, emitter and base.
When using BUV27, the base current should be controlled in the range of 0.2 to 2.0 mA, otherwise the collector current will be reduced and the effect will be poor. When the temperature is high, the collector current of BUV27 will reduce or even damage the transistor. Therefore, it is necessary to ensure the power dissipation of BUV27 is not more than 1W when working.
The specific data is subject to PDF, and the above content is for reference
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