Allicdata Part #: | BUV22-ND |
Manufacturer Part#: |
BUV22 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 250V 40A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN 250V 40A 8MHz 250W Th... |
DataSheet: | BUV22 Datasheet/PDF |
Quantity: | 1000 |
Series: | SWITCHMODE™ |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 2.5A, 20A |
Current - Collector Cutoff (Max): | 3mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10A, 4V |
Power - Max: | 250W |
Frequency - Transition: | 8MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-3 |
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Bipolar transistors are the most commonly used transistors available, and they can be divided into single transistors, double transistors, and multi-transistor structures. The BUV22 is a type of single bipolar transistor, which has a variety of applications in amplifying, switching and controlling current.
The BUV22 is a two-terminal device consisting of three single-layer N-type doped regions in a P-type semiconductor material. The typical design includes two emitter pins and one collector pin, each pin is responsible for the specific function of the device. The BUV22 is a NPN-type transistor, meaning the N-type regions are the emitter and the collector, whereas the P-type region is the base of the transistor.
The basic working principle of the BUV22 transistor is based on the depletion region that is generated at the junction of the collector and the base when the collector junction is forward-biased. This depletion region prevents the flow of electrons from the base to the collector and therefore, the voltage at the base must be increased to overcome the electrons’ refusal to flow. Inversely, when the collector junction is reversed biased, it will be attract more electrons to create more negative charges in the depletion region and as a result, current will flow from the base to the collector.
The BUV22 transistor is mostly used in devices that require current amplification, especially where larges currents are needed. This is because the BUV22 can draw a maximum power of 100 watts, which is much higher than most other types of transistors. Another advantage of the BUV22 is its flexibility, as the current flow can be adjusted easily by changing the voltage of the base.
The BUV22 is also used in switching circuits, and are often used as amplifiers or drivers in radio frequency (RF) applications. In these types of applications, the BUV22 can be used as a current control device, allowing the user to control the current levels for different components in the circuit.
The BUV22 can also be used in voltage regulators and controlling systems, where the current levels are adjusted to maintain the required output levels. The BUV22 can be used in automotive and industrial applications, such as power supplies, line drivers, and signal amplifiers. In these types of applications, the BUV22 can be used to limit the current draw and improve the efficiency of the device.
In conclusion, the BUV22 is a useful and versatile device, capable of handling large current levels and providing current control in almost any type of application. Its flexibility, power level and ease of use make it an ideal choice for a variety of different tasks and applications in electronics.
The specific data is subject to PDF, and the above content is for reference
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