Allicdata Part #: | BYG10D-E3/TR3GITR-ND |
Manufacturer Part#: |
BYG10D-E3/TR3 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 200V 1.5A |
More Detail: | Diode Avalanche 200V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG10D-E3/TR3 Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.06388 |
15000 +: | $ 0.05976 |
37500 +: | $ 0.05495 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BYG10D |
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Diodes, or rectifier diodes, are basic components of the electronic circuit. They help ensure the circuit is working properly and efficiently by allowing current to flow in one direction only. In particular, the BYG10D-E3/TR3 is a type of diode specifically designed for use in a variety of electrical engineering applications. This article will look at the application fields and working principle of this diode, so that readers have a better understanding of its purpose and function.
Applications
The BYG10D-E3/TR3 diode is designed for use in power semiconductor applications where a high operating temperature environment is required. It is most commonly used in Inverters, Uninterruptible Power supplies (UPS), Power Factor Correction (PFC) and motor drive applications. It is also a popular choice in applications such as industrial automation and control, and other power electronics areas. Due to its high operating temperature, the diode is also suitable for use in automotive environments.
In addition to its use in power semiconductor applications, the BYG10D-E3/TR3 is also a popular choice for DC-DC converters and switch mode power supplies. This is due to its ability to work at a wide range of temperatures, allowing it to be used in a variety of power electronics applications. Furthermore, its low forward voltage drop means that it is more efficient than other diodes, allowing it to save energy and improve overall performance.
Working Principle
The diode works using the principle of rectification – a process of transforming alternating current (AC) into direct current (DC). When a voltage is applied to the anode, the current passes through a single junction barrier and is subsequently rectified into a unidirectional flow. This is the most basic form of rectification and is known as a half-wave rectifier.
The BYG10D-E3/TR3 diode also has a reverse current blocking function, meaning it prevents current from flowing in the reverse direction. This helps to ensure that the circuit remains safe and efficient. Furthermore, the diode has a fast response time and is capable of withstanding high surge currents. This makes it suitable for use in power electronics applications that require fast switching or current surges.
The diode also has a high breakdown voltage, meaning it can handle large voltage drops without damaging the circuit or affecting its overall performance. This is particularly useful in power applications that require a large amount of power to be transferred. Furthermore, the diode has excellent temperature stability characteristics, meaning it is more efficient and reliable.
Conclusion
The BYG10D-E3/TR3 is a type of diode specifically designed for use in a variety of electrical engineering applications. It is most commonly used in inverters, UPS, PFC and motor drive applications. Additionally, it is a popular choice for DC-DC converters, switch mode power supplies and other power electronics applications. It works using the principle of rectification – a process of transforming AC into DC, and also has a reverse current blocking function. It also has a fast response time, high breakdown voltage and excellent temperature stability. All of these characteristics make the BYG10D-E3/TR3 a valuable choice for those looking for a reliable and efficient diode.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYG10Y-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10D-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10J-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 600V 1.5A... |
BYG10Y-E3/TR | Vishay Semic... | -- | 59400 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHM3_A/I | Vishay Semic... | 0.11 $ | 15000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10Y-M3/TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHM3_A/H | Vishay Semic... | 0.13 $ | 12600 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10M-E3/TR | Vishay Semic... | -- | 27000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10G-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10J/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10D-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10DHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10GHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10GHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10JHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10JHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10KHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10KHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10M-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10MHM3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10MHM3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHE3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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