Allicdata Part #: | BYG10YHM3_A/IGITR-ND |
Manufacturer Part#: |
BYG10YHM3_A/I |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | 1.5A,1600V,STD,AVALANCHE,SMD |
More Detail: | Diode Avalanche 1600V 1.5A (DC) Surface Mount SMA ... |
DataSheet: | BYG10YHM3_A/I Datasheet/PDF |
Quantity: | 15000 |
7500 +: | $ 0.10263 |
15000 +: | $ 0.09555 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 1.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA (DO-214AC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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BYG10YHM3_A/I diodes are efficient components for specific electrical applications. They are primarily used in power rectification applications, but many other functions are also used. This article will discuss the application field and working principle behind the BYG10YHM3_A/I diodes.
What are BYG10YHM3_A/I Diodes?
BYG10YHM3_A/I diodes are single-pole, unidirectional rectifier diodes that are able to handle high power rectification. They can be used in a variety of applications and are designed to provide reliability and cost effectiveness in power rectification applications. BYG10YHM3_A/I diodes are among the most widely used rectifier component parts in electrical applications.
Application Field
The BYG10YHM3_A/I diodes can be used in a number of applications, including rectification and switching of AC and DC circuits. They are ideal for applications where high voltage and high current must be switched, such as powering high voltage equipment, or switching a motor or motor controller. In addition, they are used in operational amplifiers, filters, power supplies, and other electrical circuits. In addition, they can be used in rectifier circuits, such as those used in high-voltage secondaries, ultrasensitive rectification, and regenerative protection.
Working Principle
The working principle of the BYG10YHM3_A/I diodes is based on the two physical effects that affect the behavior of a diode: junction depletion and major carriers. When a diode is forward biased, the junction depletion layer is formed, creating an electric field on the junction. This electric field then attracts the major carriers, allowing them to flow through the diode and provide a current.
When the diode is reverse biased, the depletion layer expands and the electric field is eliminated, preventing major carriers from flowing through the diode. This is why the BYG10YHM3_A/I diodes have such a high maximum reverse voltage rating. Because the electric field is eliminated, the current cannot flow through it, and thus the voltage cannot be applied to the diode.
Additionally, the BYG10YHM3_A/I diodes are designed with a low forward voltage drop. This allows for efficient power conversion, as the voltage is only dropped slightly within the diode when it is active. Thus, this feature makes it an ideal choice for applications where efficiency is required, such as in power supplies.
Conclusion
In conclusion, the BYG10YHM3_A/I diodes are highly efficient rectifier components suitable for a variety of applications. They are capable of handling high-power rectification and are able to provide reliable and cost-effective solutions. Due to their low forward voltage drop, they are also an ideal choice for applications where efficiency is important. Ultimately, the BYG10YHM3_A/I diodes are a reliable, cost-effective, and high-performance choice for rectification in electrical applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYG10Y-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10D-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10J-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 600V 1.5A... |
BYG10Y-E3/TR | Vishay Semic... | -- | 59400 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHM3_A/I | Vishay Semic... | 0.11 $ | 15000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10Y-M3/TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHM3_A/H | Vishay Semic... | 0.13 $ | 12600 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10M-E3/TR | Vishay Semic... | -- | 27000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10G-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10J/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10D-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10DHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10GHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10GHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10JHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10JHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10KHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10KHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10M-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10MHM3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10MHM3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHE3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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