Allicdata Part #: | BYG10G-M3/TR-ND |
Manufacturer Part#: |
BYG10G-M3/TR |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 400V 1.5A |
More Detail: | Diode Avalanche 400V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG10G-M3/TR Datasheet/PDF |
Quantity: | 1000 |
12600 +: | $ 0.08038 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The BYG10G-M3/TR is a single rectifier diode featuring a high peak reverse voltage and low forward voltage drop, making it suitable for a number of applications. It is a great choice for both commercial and industrial use as it is highly reliable, has a small size and low cost. The BYG10G-M3/TR’s various characteristics make it suitable for various applications, such as power rectification, power supply, battery charger, DC/DC converter and UPS.
The BYG10G-M3/TR operates on a 30V reverse voltage (VRRM) and a 10A forward current (IF). It is designed for low switching loss, low forward voltage drop, and good thermal capacity. It is able to maintain a low on-state resistance, making it an efficient choice for power rectification. The BYG10G-M3/TR is also capable of cutting off reverse current automatically and providing a soft switching function.
The BYG10G-M3/TR works on the principle of p-n junction rectification. The diode is made up of two regions, one containing an excess of electron carriers, which is the N-type layer, and the other containing a deficiency of electron carriers, which is the P-type layer. When a potential difference is applied across the junction of the two layers, the majority carriers on both sides of the junction may drift across the junction and be collected by the opposite polarity to create a p-n junction diode. This diode is able to conduct current in only one direction, resulting in rectification. During reverse-biased operation, the depletion region of the p-n junction forms an insulating barrier, so the circuit to the diode will not be affected while the reverse current is blocked. This effect also allows isolation between two parts of the circuit.
The BYG10G-M3/TR is used in applications such as power rectification, power supplies, DC/DC converters, and battery chargers. In power rectification, the BYG10G-M3/TR diode can be used to convert AC to DC by sending the current across the diode in only one direction. The BYG10G-M3/TR’s low switching losses and low forward voltage help to provide a more efficient power conversion. Moreover, the diode can be used for power supplies as it helps regulate the current and voltage coming into the system. It also helps reduce harmonic distortion and improves the power factor of the system. It is also used in DC/DC converters to convert direct current from one voltage level to another. In battery chargers, the BYG10G-M3/TR helps regulate the current coming into the battery, providing a constant and regulated voltage and making sure the battery is safely charged.
The BYG10G-M3/TR is a great choice for a range of industrial and commercial applications due to its low cost, high reliability, and small size. Its low reverse voltage and low forward voltage drop make it ideal for power rectification and other power conversion applications, while its built-in protection from reverse current provides added safety and assurance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYG10J-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 600V 1.5A... |
BYG10Y-E3/TR | Vishay Semic... | -- | 59400 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
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BYG10YHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10Y-M3/TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHM3_A/H | Vishay Semic... | 0.13 $ | 12600 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10M-E3/TR | Vishay Semic... | -- | 27000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10G-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10J/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10D-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10DHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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BYG10GHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10JHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10JHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10KHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10KHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10M-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10MHM3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10MHM3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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