Allicdata Part #: | BYG10MHM3_A/I-ND |
Manufacturer Part#: |
BYG10MHM3_A/I |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 1KV 1.5A DO214AC |
More Detail: | Diode Avalanche 1000V 1.5A Surface Mount DO-214AC ... |
DataSheet: | BYG10MHM3_A/I Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.08663 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A BYG10MHM3_A/I rectifier is a type of semiconductor diode commonly used in power supplies, voltage regulation, and other types of applications where rectification is needed. It is designed specifically for high temperature and high frequency operations. This type of rectifier has a maximum working temperature of 150 C and a maximum frequency of 1MHz.
It has a very low forward voltage drop, meaning it is able to convert current efficiently into higher voltage. It also has a very low reverse current, meaning it can better regulate the input voltages and help reduce losses due to power waste. Furthermore, the BYG10MHM3_A/I is able to provide high surge current, which is necessary in applications that require high transient loads.
The working principle of the device is simple. When the device is exposed to positive voltage, it allows the positive current to flow through the device and out of the anode. Meanwhile, the negative current is blocked by the diode and travels in the opposite direction toward a negative terminal. This process helps to convert AC current into DC current, a process known as rectification.
The device is commonly used in many types of applications. These include rectifying signals in order to remove noise and distortion, rectifying current for power control and regulation, as well as maintaining high voltage levels. It is also used in high-frequency power conversion circuits, as well as in circuit protection applications.
The BYG10MHM3_A/I is constructed with a multi-layer planar technology, which makes it suitable for use in low-impedance circuits and where rapid response time is required. The device features a low-current-forward voltage drop which allows acceptable levels of current to pass through it, even when the voltage is low. It also has a very low reverse-leakage current, ensuring high efficiency and optimal performance.
In conclusion, the BYG10MHM3_A/I is a type of rectifier that has an ideal combination of features that make it a great choice for many applications. It has a low-current-forward voltage drop, allows current to pass through it efficiently and has a low reverse-leakage current. These features make it suitable for use in circuits requiring high frequency responses, power regulation and protection, as well as for rectifying signals.
The specific data is subject to PDF, and the above content is for reference
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BYG10D-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10J-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 600V 1.5A... |
BYG10Y-E3/TR | Vishay Semic... | -- | 59400 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
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BYG10YHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10Y-M3/TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHM3_A/H | Vishay Semic... | 0.13 $ | 12600 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10M-E3/TR | Vishay Semic... | -- | 27000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10G-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10J/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10D-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
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BYG10DHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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BYG10GHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10JHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10JHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
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BYG10M-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10M-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10MHM3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10MHM3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
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