Allicdata Part #: | BYG10YHE3_A/IGITR-ND |
Manufacturer Part#: |
BYG10YHE3_A/I |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | 1.5A,1600V,STD,AVALANCHE,SMD |
More Detail: | Diode Avalanche 1600V 1.5A (DC) Surface Mount SMA ... |
DataSheet: | BYG10YHE3_A/I Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.09783 |
15000 +: | $ 0.09109 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 1.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA (DO-214AC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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What is BYG10YHE3_A/I?
BYG10YHE3_A/I is a single-phase silicon rectifier diode used in switching power supplies and AC-to-DC converter applications. As part of a complete power converter system, the rectifier allows for full-wave rectification of an AC power source into a DC power source. This gives the user a source for lower rippled, regulated power output.
Application Fields
BYG10YHE3_A/I is commonly used in industrial applications such as motor drives, power supplies, static inverters, UPS systems, industrial automation, and other AC-DC converter applications. It can also be used in various communications and networking devices.
In motor drives, for instance, this diode is used as part of a three-phase bridge rectifier circuit. The circuit delivers a stabilized voltage train to the motor with much less ripple than traditional single diode rectification. This reduces the amount of power wasted in the motor, increasing its efficiency.
The BYG10YHE3_A/I can also be used in power supply applications, where it can provide up to 600V of sustained rectified output, reducing cost and complexity relative to the use of multiple rectifier diodes. Similarly, in static inverter applications, the BYG10YHE3_A/I can provide a stable, low-ripple power output, with minimal heat dissipation.
Working Principle
The BYG10YHE3_A/I uses an integrated fast-recovery rectifier which rectifies an AC waveform into a DC waveform. When an AC supply is applied, the rectifier’s action ensures that only half of the AC wave is passed to the load, eliminating the need for a bulky transformer. The built-in snubber diode protects the rectifier from the adverse effects of voltage transients.
The peak output voltage of the BYG10YHE3_A/I is controlled by a series of zener diodes. The zener diodes limit the amount of voltage that is delivered to the load, protecting the rectifier when the initial power input is very high. The zener diodes also ensure that the output voltage is sustained at the desired level.
In addition, the BYG10YHE3_A/I includes overload protection circuitry, which prevents damage to the rectifier in the event of an overload. The protection circuitry immediately shuts down the circuit if the current draw is too high, preventing further damage.
Finally, the rectifier requires no external heat sinks, making it extremely efficient in applications where space is at a premium. The BYG10YHE3_A/I is significantly more efficient than traditional rectifiers, and its minimal heat dissipation makes it ideal for use in low-clearance environments.
Conclusion
The BYG10YHE3_A/I is a single-phase silicon rectifier diode and it is used in a wide range of AC-DC applications and in power converters. It utilizes an integrated fast-recovery rectifier design and features a series of zener diodes which allow for peak voltage to be limited, as well as over-voltage protection circuitry. This diode is highly efficient, and it requires no external heat sinks, making it suitable for use in applications where space is limited.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYG10Y-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
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BYG10J-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 600V 1.5A... |
BYG10Y-E3/TR | Vishay Semic... | -- | 59400 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
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BYG10YHM3_A/H | Vishay Semic... | 0.13 $ | 12600 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10M-E3/TR | Vishay Semic... | -- | 27000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10G-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10J/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10D-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10DHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10GHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10GHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10JHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10JHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10KHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10KHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10M-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10MHM3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10MHM3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHE3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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