Allicdata Part #: | BYG10K-M3/TR3-ND |
Manufacturer Part#: |
BYG10K-M3/TR3 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 800V 1.5A |
More Detail: | Diode Avalanche 800V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG10K-M3/TR3 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.08038 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are the most commonly used type of semiconductor device in many electrical circuits. Different types of diodes have multiple applications, including power rectification, voltage regulation, and noise suppression. The BYG10K-M3/ TR3 is a single rectifier diode, designed specifically for power rectification applications.
BYG10K-M3/TR3 Overview
The BYG10K-M3/TR3 is a rectifier diode with a forward voltage of ~ 5.6 V and a peak reverse repetitive voltage of 1000V. Its power dissipation is 10 W and it has a reparative thermal resistance at 25 C of 0.7C/W. The diode also has an operating junction temperature exceeding 125 C. The BYG10K-M3/TR3 is packaged in a MELF form factor and is functionally equivalent to the STPS1M05G and STPS1P05G rectifier diodes.
BYG10K-M3/TR3 Applications
The BYG10K-M3/TR3 Single Rectifier Diode is a versatile component that offers a wide range of applications. The diode is commonly used in AC/DC power converters, DC/DC power converters, and other electronic circuits for power rectification. It is also used in battery charging circuits, EMI/RFI Filter circuits, and in secondary switches where reverse recovery characteristics are important.
The BYG10K-M3/TR3 can also be used in various automotive applications such as starting and charging systems, battery hyper-charging circuit, and overvoltage protection circuits, etc. The device is widely used in power electronics circuits and protection condensers, such as overcurrent protection circuits, overvoltage protection circuits, AC/DC and DC/DC power converters, and converter driver modules.
BYG10K-M3/TR3 Working Principle
The BYG10K-M3/TR3 is a single rectifier diode that works on the principle of direct current (DC) rectification. When a DC voltage is applied to the diode, it allows current to flow in one direction and prevents it from flowing in the opposite direction. This is known as rectification and is the same principle used in simple AC/DC power converters and other electric circuits.
The BYG10K-M3/TR3 also has an inverse relationship between the applied voltage and resistance of the diode. As the voltage increases, the resistance of the diode decreases and more current can flow through the diode. This relationship ensures that the diode can handle higher voltage and power while still providing efficient power rectification.
Conclusion
The BYG10K-M3/TR3 Single Rectifier Diode is a versatile and effective electronic component for power rectification applications. It is commonly used in power electronics circuits and provides efficient rectification with its inverse resistance-voltage characteristics. Its broad range of applications and operating junction temperature make the BYG10K-M3/TR3 an ideal solution for various power electronics projects.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYG10Y-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10D-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10J-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 600V 1.5A... |
BYG10Y-E3/TR | Vishay Semic... | -- | 59400 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHM3_A/I | Vishay Semic... | 0.11 $ | 15000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10Y-M3/TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHM3_A/H | Vishay Semic... | 0.13 $ | 12600 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10M-E3/TR | Vishay Semic... | -- | 27000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10G-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10J/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10D-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10DHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10GHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10GHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10JHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10JHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10KHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10KHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10M-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10MHM3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10MHM3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHE3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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