Allicdata Part #: | BYG10M-E3/TR3GITR-ND |
Manufacturer Part#: |
BYG10M-E3/TR3 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 1KV 1.5A |
More Detail: | Diode Avalanche 1000V 1.5A Surface Mount DO-214AC ... |
DataSheet: | BYG10M-E3/TR3 Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.07290 |
15000 +: | $ 0.06878 |
37500 +: | $ 0.06398 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BYG10M |
Description
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BYG10M-E3/TR3 application field and working principle
BYG10M-E3/TR3 is a type of single rectifier diode designed for high efficiency switching applications. It is an ideal component for devices that require high voltage power supply and fast switching speed. The BYG10M-E3/TR3 has a wide range of uses, from automotive to consumer electronics applications.
The BYG10M-E3/TR3 is an advanced rectifier diode. It is made up of two main parts: the substrate and the rectifying element. The substrate is a semiconductor material that is doped with impurities to form a partially conductive layer. This layer acts as the base for the rectifying elements. The rectifying element consists of two sections that are connected to the substrate. One section is the anode, which conducts current in one direction and the other is the cathode, which conducts in the opposite direction.
The BYG10M-E3/TR3 can handle up to 10A of current, and is rated for an operating voltage of up to 130V, making it suitable for applications that require high power and high efficiency. The diode has a low standing voltage of less than 0.4V and a switching speed that is much faster than conventional diodes. This allows for fast switching performances in demanding electronic applications.
The BYG10M-E3/TR3 can be used in automotive, consumer electronics and other applications where fast switching speeds and high power are required. Examples include alternators, starters, amplifiers, motor controllers, and rectifiers for voltage regulation. In addition, the diode is ideal for applications that need protection from over-current, such as automotive audio systems, AC-DC inverters and voltage regulation circuits.
The working principle of BYG10M-E3/TR3 is based on the principle of “p-n junction”. When a voltage is applied across the diode, the voltage forces electrons and holes to move across the p-n junction. As electrons accumulate on the n-side and holes on the p-side, a dipole electric field is created, forming a barrier between the two junctions. This barrier prevents current from flowing in the reverse direction, making it a rectifier diode. By varying the applied voltage and current, it can be used to control output voltage and current levels in a range of applications.
In conclusion, BYG10M-E3/TR3 is a rectifier diode that is ideal for high current and fast switching applications. It can be used in automotive, consumer electronics, and other devices that need protection from over-current and high efficiency. With its wide capability range, the BYG10M-E3/TR3 can provide effective solutions to many applications.
The specific data is subject to PDF, and the above content is for reference
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