Allicdata Part #: | BYG10Y-E3/TR3GITR-ND |
Manufacturer Part#: |
BYG10Y-E3/TR3 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 1.6KV 1.5A |
More Detail: | Diode Avalanche 1600V 1.5A Surface Mount DO-214AC ... |
DataSheet: | BYG10Y-E3/TR3 Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.09573 |
15000 +: | $ 0.08913 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BYG10Y |
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Introduction to BYG10Y-E3/TR3
The BYG10Y-E3/TR3 is a single-diode rectifier device. It is suitable for use in low voltage, high frequency rectification applications. The device is designed to be used in a configuration that provides low leakage current and high efficiency. This diode rectifier is suitable for high-frequency rectifier applications where the forward voltage drop is an important consideration.
Application field and Working Principle
The BYG10Y-E3/TR3 is used primarily in applications such as high frequency rectification, reverse conduction protection, and power conditioning. The device is also commonly used in applications requiring short circuit protection. This diode rectifier can also be used in other applications, such as surge protection, protection from inductive loads, ripple control, and regulating excess energy. The device can operate in both normal and reverse directions.
When the BYG10Y-E3/TR3 is operating in reverse direction, the device\'s transistor will act as an open circuit. This will limit the current flow from the anode to the cathode. This type of operation is beneficial for circuit protection, as it limits the amount of current flowing through the circuit.
When the BYG10Y-E3/TR3 is operating in normal direction, the transistor will be activated. This will allow current to flow from the anode to the cathode. This type of operation is beneficial for applications that require a large amount of power, such as power conditioning and reverse conduction protection.
The most important benefit of the BYG10Y-E3/TR3 is its low forward voltage drop. This low voltage drop helps to increase the efficiency of the device, which makes it suitable for high-frequency rectifier applications. Additionally, the device has a fast switching speed and a high reverse voltage tolerance. This makes it suitable for applications that require high power ratings and fast switching speeds.
Conclusion
The BYG10Y-E3/TR3 is a single-diode rectifier device that is suitable for use in a variety of applications, including high frequency rectification, reverse conduction protection, protection from inductive loads, protection from surges, and power conditioning. The device is designed with a low forward voltage drop and a high reverse voltage tolerance, which makes it suitable for applications that require high power ratings. This diode rectifier also has a fast switching speed, which makes it suitable for applications that require fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYG10Y-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10D-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10J-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 600V 1.5A... |
BYG10Y-E3/TR | Vishay Semic... | -- | 59400 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHM3_A/I | Vishay Semic... | 0.11 $ | 15000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10YHE3_A/H | Vishay Semic... | 0.13 $ | 1000 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10Y-M3/TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 1.6KV 1.5... |
BYG10YHM3_A/H | Vishay Semic... | 0.13 $ | 12600 | 1.5A,1600V,STD,AVALANCHE,... |
BYG10M-E3/TR | Vishay Semic... | -- | 27000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10G-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-E3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10J/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10D-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10K-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10DHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10GHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10GHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10JHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10JHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG10KHM3_A/H | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10KHM3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG10M-M3/TR3 | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10M-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG10MHM3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10MHM3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 1KV 1.5A ... |
BYG10DHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10DHE3_A/I | Vishay Semic... | 0.1 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
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