Allicdata Part #: | BYG10GHE3_A/H-ND |
Manufacturer Part#: |
BYG10GHE3_A/H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 400V 1.5A DO214 |
More Detail: | Diode Avalanche 400V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG10GHE3_A/H Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The BYG10GHE3_A/H is a single diode rectifier with a variety of applications, primarily used in a variety of power-switching and rectifying applications. It is an efficient, compact, safe and reliable device that can be used in a variety of industries. The BYG10GHE3_A/H is designed with a high-voltage rating and is able to withstand a wide range of voltages, in both AC and DC applications. It is also designed with a high current-capacity, making it capable of handling a variety of power loads. The device is made from a combination of metal and plastic materials and is designed with a high-quality construction, which allows it to handle a variety of duty cycles. The BYG10GHE3_A/H is designed with a high-temperature and high-performance rating, making it ideal for a variety of applications.
The BYG10GHE3_A/H makes use of a metal-oxide-semiconductor field-effect-transistor (MOSFET) in its basic design. This device is constructed with a high-power MOSFET in the rectifier stage, which is used to regulate the current that flows in the device. The MOSFET is connected to two terminals, which are referred to as the anode and cathode. The anode and cathode are the two main terminals of the device, and are used to control the voltage and current that is being applied through the device. The anode is the higher voltage terminal, and the cathode is the lower voltage terminal. The current is regulated by the MOSFET through the drain-source terminals, which are also referred to as the source and drain.
The BYG10GHE3_A/H also has an additional rectifier layer to ensure that the current that is supplied to the device is of the correct amount for the device to function properly. This layer is referred to as a secondary rectifier, and helps to ensure that no excessive current is supplied to the device. This layer is also used to prevent the device from being affected by transients, or rapid changes in voltage. It is also used to provide additional protection against voltage spikes and other potential short circuits.
The BYG10GHE3_A/H can be used in a variety of applications. This device is designed for use in power-switching applications, such as power supplies, DC-DC converters, audio amplifiers, and DC motors. It is also suitable for use in linear and switch mode power devices. The BYG10GHE3_A/H can also be used in rectifying applications such as solar cells, radio-frequency power supplies, and adjustable-speed drives. The device can also be used in medical equipment and other applications that require a reliable, efficient, and safe device.
The BYG10GHE3_A/H is a reliable and efficient device that can be used in a variety of applications. It is designed with a high-voltage rating, current-capacity and temperature-rating, making it an ideal device for a variety of applications. The device is constructed with a high-quality construction, which ensures that the device can handle a variety of duty cycles. The device is also designed with a secondary rectifier stage, which ensures that the device is protected from transients and voltage spikes. This device is an efficient, compact, and safe device, which makes it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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BYG10D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
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BYG10D-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG10G-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG10J-M3/TR | Vishay Semic... | 0.09 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
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