BYG10MHE3_A/I

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<p>BYG10MHE3_A/I is a high voltage fast-recovery diode in the Diodes - Rectifiers - Single category. This diode is capable of switching up to 1500V with an avalanche energy capability of 1.35mJ at an operating temperature range of -55 to +175 °C. It is designed with a optimized construction, making it suitable for a wide range of applications such as high voltage power supplies, voltage regulator modules, high voltage power factor correction, and high voltage rectification, among others.</p><p>The BYG10MHE3_A/I is constructed from a silicon body, and it has a low forward voltage drop rated at 1.1V (max) @ 1A. The device also has a low reverse leakage of less than 0.001 milliamps, ensuring that it is highly efficient in operation. It features excellent power dissipation and surge capability, enabling it to handle high power loads. Its high pulse triggering performance, combined with its low thermal resistance, allows it to be used in harsh environments and in applications with high current pulses and high frequency applications.</p><p>In terms of its working principle, the BYG10MHE3_A/I rectifies current under the effect of the electric field applying to them. The current will only flow along the one direction. During forward bias, the current will flow from the cathode to the anode and the rectified current will result in an output voltage. During reverse bias, conduction of current is blocked, if the voltage is high enough, the diode will become resistive. As a result, this rectifies alternating current into direct current, smoothing out the fluctuations. Furthermore, it also provides protection from reversed voltage.</p><p>BYG10MHE3_A/I can be used for innumerable applications. It is mainly used used in high voltage power supplies, voltage regulator modules, high voltage power factor correction, and high voltage rectification. It can also used in numerous industries such as automotive, industrial and telecom. These industries use the BYG10MHE3_A/I for an array of applications, ranging from dc-dc converters, motor drives and pulsed power supplies to photovoltaic arrays and flyback transformers.</p><p>Overall, the BYG10MHE3_A/I diode is capable of handling high voltage power supplies, voltage regulator modules, high voltage power factor correction, and high voltage rectification. It is constructed with a high voltage fast-recovery design, allowing it to switch up to 1500V with an avalanche energy capability of 1.35mJ at a wide range of temperatures. It not only provides excellent power dissipation and surge capabilities, but also provides protection from reversed voltage, making it an ideal choice for a variety of applications.</p>

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