| Allicdata Part #: | CDM2205-800FPSL-ND |
| Manufacturer Part#: |
CDM2205-800FP SL |
| Price: | $ 1.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Central Semiconductor Corp |
| Short Description: | MOSFET N-CH 5A 800V TO-220FP |
| More Detail: | N-Channel 800V 5A (Tc) 48W (Tc) Through Hole TO-22... |
| DataSheet: | CDM2205-800FP SL Datasheet/PDF |
| Quantity: | 981 |
| 1 +: | $ 1.16550 |
| 50 +: | $ 0.94185 |
| 100 +: | $ 0.84767 |
| 500 +: | $ 0.65930 |
| 1000 +: | $ 0.54627 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 705pF @ 25V |
| Vgs (Max): | 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 17.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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CDM2205-800FP SL application field and working principle
CDM2205-800FPSL, or silicon P-channel MOSFET, is an enhancement type low voltage power transistor developed by Canon Electronics Corporation. It has low on-state resistance, low gate charge and high frequency capability, making it suitable for a wide range of applications such as power converters, motor controls, switch mode power supplies (SMPS), and high current applications.
Application
In switching mode power supplies (SMPS) CDM2205-800FP SL can be used as an active switch between load and source. Due to its low on-state resistance, it is able to pull source voltage down quickly, providing less voltage drop and higher efficiency. This type of MOSFET is also great for motor switching due to its low gate charge, which lessens voltage losses and improves responsiveness. CDM2205-800FP SL is also ideal for high current applications due to its high current rating up to 2205 A and its ability to handle large power surges. Additionally, its high frequency capability enables it to be used in devices such as radiofrequency power amplifiers and other applications that require high frequency switching.
Working Principle
CDM2205-800FP SL utilizes a single-gate design, allowing for a simpler drive circuit. The P-channel MOSFET essentially acts as a switch, allowing passage of current when the signal is active and blocking it when it is not. This type of transistor has a structure that prevents the implementation of diodes, so it can only control current in one direction. Its gate is made of a conductive material that is activated by an electric field when a voltage is applied. The channel is formed between the source and a drain, resulting in a current flow when the gate and drain voltages are higher than the source voltage. When the gate voltage is higher than the drain voltage, the current flow stops.
CDM2205-800FP SL has very low on-state resistance. This reduces voltage drop between the source and load, meaning that this type of MOSFET is able to provide greater efficiency under high current load conditions. Additionally, the comparatively low gate charge leads to short switching times and high frequency capability.
Conclusion
In summation, CDM2205-800FP SL is an excellent choice for a variety of applications due to its low on-state resistance, low gate charge, and high frequency capability. Its single gate design facilitates a simpler drive circuit and its ability to handle large power surges makes it great for high current applications. Overall, CDM2205-800FP SL is an ideal choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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CDM2205-800FP SL Datasheet/PDF