CDM2206-800LR SL

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CDM2206-800LR SL is a type of MOSFET in the group of single transistors. It belongs to the SuperiorLight family of transistors.

CDM2206-800LR SL is a high-power device, as it can handle up to 400V and a maximum continuous drain current of 8A. In addition, it has a drain-source breakdown voltage of 800V, a maximum gate-source voltage of ± 10V and a maximum power dissipation of 24W.

The drain-source on resistance of CDM2206-800LR SL is very low, making it an ideal choice for high-current applications such as automotive circuits and switching power supplies. Additionally, due to its small footprint and low on-resistance, it is well suited for applications where space is a critical factor.

The main application field of the CDM2206-800LR SL transistor is power management and it is used in various applications such as high power switching, voltage regulation, motor control, and DC-DC converters. It is also used in battery management systems, automotive applications, and fibre optic applications.

The working principle of the CDM2206-800LR SL transistor is based on the MOSFET design. It uses metal oxide semiconductor technology and is operated in a highly efficient manner by only switching when voltage or current exceeding the threshold levels is applied. The metal oxide layer prevents current flow through the transistor\'s channel until it is biased with a specific voltage. When this threshold voltage is applied, the MOSFET becomes conductive, allowing current to flow through the channel without increasing its drain-source voltage.

The main benefit of using CDM2206-800LR SL is its ability to provide a high source-drain voltage while not consuming much power. In addition, it has low noise levels, high immunity to interference, and excellent EMC performance.

In conclusion, the CDM2206-800LR SL is an ideal choice for power management applications due to its high efficiency, low power consumption, and excellent EMC performance. Furthermore, its low on-resistance and small size makes it an ideal solution for applications where space is a critical factor.

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