CDM2208-800FP SL

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CDM2208-800FP SL is a very important device belonging to the type of power field effect transistors. It is a high drain, low-cost n-channel MOSFET and is ideal for applications that require a low power consumption with a high gain. The device is also suitable for use in high-speed switching circuits.

The device features a drain-source breakdown voltage of 800V and an internal gate-source reverse breakdown voltage of 200V. It has an on channel resistance of 0.2Ω and a gate-source voltage of -10V. It has a current drive of 64A and a junction-to-ambient thermal resistance of 1.4°C/W.

The device is designed for use in high-power electronic applications such as power amplifiers, power supplies, motor controls and AC inverters. It is also suitable for use in high-speed switching circuits. Due to the low power consumption, it is also suitable for use in embedded applications. The device is also suitable for use in low-voltage applications, as it has a drain-source breakdown voltage of only 800V.

The working principle of the device is based on the principles of Field Effect Transistor (FET) technology. The device utilizes a gate voltage to control the conduction of electrons between the source and the drain. This gate voltage applied to the device will open channels in the channel region of the device which will allow electrons to flow from the source to the drain. The device can be operated in either an enhancement mode or in a depletion mode depending upon the applied gate voltage. The device is designed to maximize efficiency and reliability.

In the enhancement mode, the device operates when there is a positive voltage applied at the gate electrode. This will create a depletion region between the source and the drain. The depletion region is then filled with mobile electrons and holes. These mobile electrons will then be conducted to the drain by the electric field created by the applied voltage. In this mode, the current between the source and the drain is controlled by the applied voltage.

In the depletion mode, the device operates when a negative voltage is applied to the gate electrode. This will create a conduction channel between the source and the drain. The electric field created by the applied negative voltage will then push away mobile electrons and holes from the conduction channel. This will then reduce the current flowing from the source to the drain. The device will be turned off when the applied voltage is removed.

The CDM2208-800FP SL is a very versatile power field effect transistor which is ideal for applications requiring a low power consumption with a high gain. It has a drain-source breakdown voltage of 800V and an internal gate-source reverse breakdown voltage of 200V. It has an on channel resistance of 0.2Ω and a gate-source voltage of -10V. The device is suitable for use in various applications such as power supplies, motor controls, embedding applications, AC inverters and high-speed switching circuits.

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