CGH40006P

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The CGH40006P is a high-performance RF power MOSFET designed specifically for use in general-purpose RF applications up to 4 GHz. It offers an outstanding combination of power and efficiency while being easy to drive and maintain. This MOSFET is suitable for a wide range of amplification applications, including but not limited to high-power amplifiers, low-noise amplifiers, by-pedals, linear amplifiers, and transistor logic.

The CGH40006P is a shielded lateral enhancement mode N-channel MOSFET, featuring an extremely performance and robust design. It is made with the advanced Low Voltage (2V) threshold process and features an extended drain-source voltage, normally limited to 6V. The device has a total gate charge of 42 nC, with a low output capacitance, and high power gain in the 100-200 MHz frequency range, which gives it superior performance and reliability.

The most significant benefit of using this type of MOSFET is its ability to deliver high power with extremely low distortion. The high power gain over a wide frequency range ensures excellent linearity, even at high output power. This makes CGH40006P particularly well suited for linear broadcast amplifiers, where higher efficiency and low distortion are needed. The gate-drain and gate-source spikes, or “tail”, also makes it an excellent choice for powerful oscillators and oscillator exciters.

In terms of working principle, CGH40006P is a voltage-controlled MOSFET. When rectangular voltage is applied to the gate electrode, the MOSFET transistor is in an enhancement mode—meaning that the source-drain current can be controlled by varying the gate-source voltage. Furthermore, this MOSFET features an ultra-low input capacitance, which results in high input impedance and exceptional bandwidth.

In terms of applications, CGH40006P is used in high-power amplifiers with low noise figure, by-pedals, linear amplifiers, oscillators, exciters and transistor logic applications. The high gain and output power, coupled with good linearity, make this MOSFET an ideal choice for high-efficiency applications. Additionally, due to its extremely low noise figure, it can be used in power-sensitive applications such as communication systems, where low distortion and low noise are paramount.

In conclusion, CGH40006P is a high-performance, high-efficiency RF power MOSFET, designed specifically for use in general-purpose RF applications up to 4 GHz. It features an extended drain-source voltage and an ultra-low input capacitance, which makes it an ideal choice for high-power amplifiers, linear amplifiers, oscillators, and other transistor logic applications. Its superior combination of power and efficiency, excellent linearity and high power gain, make it an ideal choice for high-efficiency applications.

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