Allicdata Part #: | CGH40010F-ND |
Manufacturer Part#: |
CGH40010F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 28V 440166 |
More Detail: | RF Mosfet HEMT 28V 200mA 0Hz ~ 6GHz 14.5dB 12.5W 4... |
DataSheet: | CGH40010F Datasheet/PDF |
Quantity: | 1522 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 0Hz ~ 6GHz |
Gain: | 14.5dB |
Voltage - Test: | 28V |
Current Rating: | 3.5A |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 12.5W |
Voltage - Rated: | 84V |
Package / Case: | 440166 |
Supplier Device Package: | 440166 |
Base Part Number: | CGH40* |
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CGH40010F is one of the most popular FETs in the radio frequency (RF) range. RF FETs are the devices of choice for generating, amplifying, and modulating RF signals. They are used in a wide range of applications, from wireless communication links and receivers to RF power amplifiers and analog signal processors. As such, the CGH40010F provides an indispensable foundation for any platform designed to interact with the electromagnetic spectra.
The CGH40010F is a Depletion Mode Enhancement type MOSFET, consisting of a P-channel enhancement type MOSFET on the source side and an N-Channel depletion type MOSFET on the drain side. This allows for high performance operation with a relatively low gate-source capacitance. This translates to improved controllability and higher speed operation, in comparison with its N-Channel enhancement counterparts.
Under normal operating conditions, the CGH40010F works by controlling the flow of electrons through a controlled channel between the source and drain of the FET. This is achieved by making use of an electric field. Applying a voltage to the gate terminal creates an electric field in the vicinity of the gate electrode. This electric field affects the charges in the P-channel in the region near the gate. Consequently, the charges in the N-channel are affected, and the operation of the device can be adjusted by controlling the voltage applied to the gate.
The application field for the CGH40010F is wide and varied, but there are certain areas where it is particularly well suited. These include RF power amplifiers, RF switches and antenna tuners, as well as applications in the biomedical, avionics and automotive industries. In addition, the CGH40010F can be used in the manufacture of RF mixers, oscillators, and RF signal processors.
The CGH40010F is an ideal choice for use in high power, high frequency applications. It has the capability to provide up to 12.5 Volts of gate voltage and up to 7 Watts of gate power, making it ideal for applications operating up to 3 GHz. It also features extremely low input and output capacitances, providing higher-frequency operation and improved controllability.
The CGH40010F is a great choice for applications where fast switching times and low power consumption are important factors. Its versatility in terms of application, combined with its excellent frequency and controllability capabilities, make it an attractive choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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