CGH40090PP Allicdata Electronics
Allicdata Part #:

CGH40090PP-ND

Manufacturer Part#:

CGH40090PP

Price: $ 220.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: RF MOSFET HEMT 28V 440199
More Detail: RF Mosfet HEMT 28V 1A 0Hz ~ 4GHz 12.5dB 100W 44019...
DataSheet: CGH40090PP datasheetCGH40090PP Datasheet/PDF
Quantity: 111
1 +: $ 200.03800
Stock 111Can Ship Immediately
$ 220.04
Specifications
Series: GaN
Packaging: Tube 
Part Status: Active
Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 12.5dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: --
Current - Test: 1A
Power - Output: 100W
Voltage - Rated: 84V
Package / Case: 440199
Supplier Device Package: 440199
Base Part Number: CGH40*
Description

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CGH40090PP stands for Constant Gate - Drain, High Power, Low Resistance, PP-Package configuration. It is a high-power, low-resistance field effect transistor (FET) designed for radio frequency (RF) applications. It features low threshold voltage, high gain and low DC current, making it an ideal choice for RF amplifiers and switching operations.

CGH40090PP Application Field

The CGH40090PP is mainly used in RF transmitter systems. Its low resistance and low threshold voltage enables the device to efficiently operate at a wide frequency range while allowing high gain, low power consumption and low DC distortion. It is also used in power amplifiers, switches, mixers, detectors and nonlinear long-haul signal processing circuits. It is also used in RF switching operations due to its low switching time and low operating voltage.

CGH40090PP Working Principle

The CGH40090PP operates using a gate-source voltage to control the current flowing through the device. The voltage controls the amount of current-carrying “drain-source channels” in the transistors. This allows the device to be used for switching and amplifying RF signals. It is an enhancement-mode FET which means in order for it to conduct current there must be some external voltage applied across its gates and sources. The gate controls the amount of current and the source supplies the current.

To turn the CGH40090PP device ON, the gate-source voltage needs to exceed a certain threshold voltage which is usually 5 V. This will in turn turn ON the drain-source channels and allow current to flow through the device. To turn the device OFF, the gate-source voltage needs to drop below the threshold voltage, which in turn will turn OFF the drain-source channels, preventing any current from flowing through the device.

The CGH40090PP has a variety of advantages over other FETs, such as low power consumption, fast switching time and low operating voltage. This makes the device an ideal choice for RF applications. Additionally, the device is relatively small in size and has low cost, making it an attractive choice for cost sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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