CGH40010P

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CGH40010P is an Automotive Mega High Voltage N-Channel Enhancement Mode Power MOSFET and is one of the most popular MOSFETs designed and manufactured by Freescale Semiconductor. The package of CGH40010P is designed to help simplify the custom thermal designs while decreasing the total system cost. This device is a part of a family of High Voltage Power MOSFETs that are qualified to AEC-Q101. CGH40010P is both cost-effective and thermally efficient, and it provides double the power of a D2PAK in the same space and is the preferred choice for automotive and commercial applications.

CGH40010P is capable to bear avalanche breakdown voltage of 100V and static drain-source on-state resistance of 0.076 Ohms. The trade-off between higher breakdown voltage and lower on-state resistance helps in optimized performances under a wide range of conditions. Its maximum power dissipation (PD) is 25W when mounted on a heat sink at 30°C case temperature.

CGH40010P application fields mainly include provider companies, electric discharge machines and high-voltage battery chargers. It can be used for power supply application. CGH40010P is a suitable choice for switch mode power supplies, rectifiers, lighting and motor speed control, motor drives, solenoid and electronic ballast control, relay control and also for dynamic braking as well as in an extensive range of other applications.

CGH40010P is capable to act as either a voltage effect or a current effect device. The voltage effect is the maximum allowable voltage between the drain and the source, while the current effect is the maximum permissible current that passes through the channel. These effects occur when a voltage is applied to the gate. CGH40010P is an enhancement mode power MOSFET which works two times more efficiently than the standard MOSFETs. This helps in minimizing the power dissipation. The P type dielectric structure of the MOSFET enables low on-state resistance and high breakdown voltage.

The working principle of the CGH40010P is in accordance with the principle of MOSFETs, that is, controlling the resistance by adjusting the input voltage in a certain area. When an input voltage (gate voltage) is applied to the gate terminal, it produces an electric field on the gate-drain interface and modulates the conducting channel between the drain and the source. When the electric field on the gate-drain interface has been established, the resistance of the conducting channel decreases and the current flow through the device increases.

In conclusion, the CGH40010P is a high voltage power MOSFET for automotive and commercial applications. It works based on the principle of voltage effect and current effect, enabling it to be used for a range of applications. It is a thermally efficient and cost-effective device that has low on-state resistance and high breakdown voltage. This helps to reduce power dissipation, resulting in high-performance electronics.

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