CMUDM7005 TR Allicdata Electronics
Allicdata Part #:

CMUDM7005TR-ND

Manufacturer Part#:

CMUDM7005 TR

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: MOSFET N-CH 20V 650MA SOT523
More Detail: N-Channel 20V 650mA (Ta) 300mW (Ta) Surface Mount ...
DataSheet: CMUDM7005 TR datasheetCMUDM7005 TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.22691
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Package / Case: SOT-523
Supplier Device Package: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
Vgs (Max): 8V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CMU DM7005 TR Application Field and Working Principle

CMU DM7005 TR is an advanced version of the MOSFET, or metal oxide semiconductor field effect transistor. This junction field-effect transistor has been specifically designed to meet the demands of high-power switching or RF applications.

It is a three-terminal device that allows a controlled amount of current to pass when voltage is applied to the gate terminal. It has lower on-state resistance and higher current handling capability than its predecessor, the MOSFET. The DM7005 TR can be used in a wide range of applications, including high-power switching, RF switching, power supplies, and logic gates.

Working Principle of CMU DM7005 TR

The working principle of CMU DM7005 TR involves an electric field that is generated between a central gate electrode and a semiconductor material. The central gate electrode is surrounded by an insulated layer of electric charges. When a voltages is applied to the gate electrode, these electric charges are displaced, modifying the electric field. This creates an electric potential at the surface of the semiconductor material called the threshold potential. This changes the capacitance of the gate and the resistance of the device.

The operation of the device is dependent on the amount of voltage applied to the gate terminal. If the voltage is below the threshold voltage, the device will remain in an "off" state and no current will flow. However, if the voltage reaches or exceeds the threshold voltage, the device enters an "on" state and current will flow through the device. By controlling the amount of voltage applied to the gate terminal, the on/off operations of the device can be effectively controlled.

Applications of CMU DM7005 TR

Since its introduction, the CMU DM7005 TR has been widely used in a variety of applications due to its low on-state resistance and high current carrying capability. It is primarily used for high-power switching in RF applications, such as RF switches, power supplies, and logic gates. It is also used in industrial automation and motor control systems due to its small form factor and high switching speed.

The CMU DM7005 TR can also be used in a wide range of consumer electronic devices such as televisions, sound systems, and gaming consoles. Aside from its on/off features, it is also used to produce analog signals like pulse-width modulation.

Advantages of CMU DM7005 TR

The CMU DM7005 TR is characterized by its low on-state resistance, high current carrying capability, and fast switching speed. This makes the device ideal for use in switching applications where current has to be switched rapidly and accurately. Additionally, it is highly reliable due to its robust design. The device is also easy to integrate into circuits and requires minimal external components.

The device is also capable of operating over a wide range of temperatures and can maintain its performance for extended periods of time. This makes it ideal for use in high-reliability applications such as military, aerospace, and medical equipment. The device is also highly efficient, reducing energy consumption and thermal management requirements.

Conclusion

The CMU DM7005 TR is an advanced version of the MOSFET and is specifically designed to meet the demands of high-power switching or RF applications. With its low on-state resistance, high current carrying capability, and fast switching speed, the device is ideal for use in switching applications. It can also be used in consumer electronic devices such as televisions, sound systems, and gaming consoles. The device is highly reliable, efficient, and can operate over a wide range of temperatures, making it an ideal choice for high-reliability applications.

The specific data is subject to PDF, and the above content is for reference

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