Allicdata Part #: | CMUDM8005TR-ND |
Manufacturer Part#: |
CMUDM8005 TR |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET P-CH 20V 650MA SOT523 |
More Detail: | P-Channel 20V 650mA (Ta) 300mW (Ta) Surface Mount ... |
DataSheet: | CMUDM8005 TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.22691 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 16V |
Vgs (Max): | 8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 350mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 650mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CMUDM8005 TR is an electrically-controlled, fully depleted, enhancement-mode, dynamic single gate MOSFET transistor. It is designed for use in high-speed, high-performance switching applications. The transistor is available in both surface mount (SMT) and through hole (THT) packages.
The application field of CMUDM8005 TR is to provide high-performance switching applications with low power consumption, low noise, and high switching speed. It can be used in a variety of electronics products, such as computers, mobile phones, automotive electronics, embedded systems, modems, and other communication devices. For example, it can be used in DC-DC converters, switch-mode power supplies, automotive DC-DC converter system control, and AC adapters. It can also be used in low voltage, high frequency switching applications.
The working principle of CMUDM8005 TR is based on a single gate MOSFET transistor. It is an enhancement-mode transistor, which means that its input voltage must be greater than the threshold voltage in order to turn the transistor on. When Vgs is greater than the threshold voltage, the channel between the drain and source opens such that electrons can flow freely, thereby turning the transistor on and allowing current to flow between the drain and source. The current flowing through the drain-to-source is controlled by the gate-to-source voltage (Vgs).
The transistor has a level shifter that allows the gate-to-source voltage (Vgs) to be shifted to appropriate level. The level shifter allows the device to have a very low gate current, making it suitable for use in low power applications. The current control range is from -1 A to +1 A, which makes the device very versatile. The device also has a low input capacitance and a low on-resistance, which helps to maximize efficiency.
In summary, CMUDM8005 TR is an enhancement-mode, dynamic single gate MOSFET transistor designed for high-performance switching applications with low power consumption, low noise, and high switching speed. Its application fields are many electronics products, including computers, mobile phones, automotive electronics, embedded systems, modems, and other communication devices. Its working principle is based on a single gate MOSFET transistor, with a level shifter allowing a very low gate current, and a current control range of -1 A to +1 A.
The specific data is subject to PDF, and the above content is for reference
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