CMUDM8004 TR Allicdata Electronics
Allicdata Part #:

CMUDM8004TR-ND

Manufacturer Part#:

CMUDM8004 TR

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: MOSFET P-CH 30V 450MA SOT523
More Detail: P-Channel 30V 450mA (Ta) 250mW (Ta) Surface Mount ...
DataSheet: CMUDM8004 TR datasheetCMUDM8004 TR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.21011
Stock 3000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-523
Supplier Device Package: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
Vgs (Max): 8V
Gate Charge (Qg) (Max) @ Vgs: 0.88nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 430mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CMUDM8004 TR is a type of single transistor designed and manufactured by Chenming USA Incorporation, as one of the leading components suppliers in the electronics industry. This type of transistor falls under the category of field effect transistors (FETs) and more specifically, metal oxide semiconductor field effect transistors (MOSFETs).

The application of the CMUDM8004 TR can be seen throughout a variety of applications in the electronics industry, mainly as voltage controlled resistors, switches and amplifiers. These devices can be used in switching circuits, power amplification, linear or non-linear circuits and analog circuits. CMUDM8004 TRs are suitable for high frequency switching due to their high switching speeds and low output impedances. Furthermore, these transistors also offer excellent linearity for good current and voltage regulation over wide operating temperature and voltage ranges, which is a feature that makes them particularly useful for automotive and other applications where a large dynamic range of operating temperature and voltage is required.

The working principle of CMUDM8004 TR is based on a three-terminal design, which allows the device to adjust the current passing through it. In order to understand the function of this device, one must first understand how FETs work. A FET consists of a gate, which controls the flow of electrons passing through the source and drain, which are connected to respective terminals. By controlling the voltage applied to the gate, the flow of electrons passing through the source and drain can be controlled. As the voltage increases, the current passing through the source and drain increases, while when the voltage decreases, the current passing through the source and drain decreases.

The CMUDM8004 TR also has a built-in dynamic biasing circuit, which enable the device to detect the current passing through the drain and adjust the gate voltage accordingly. This ensures that a constant current is passed through the device under different conditions, such as different temperatures and voltages. In addition, the CMUDM8004 TR also features a built-in avalanche breakdown protection to prevent over-voltage or excessive current from damaging the device.

The CMUDM8004 TR is widely used in switching and linear applications. Switching applications make use of the device’s high switching speeds and low output impedances to switch quickly between power supply levels with minimal losses. Linear applications make use of the device’s excellent linearity qualities to regulate current and voltage levels over a wide range of conditions. Additionally, the device’s avalanche breakdown protection can be used to prevent circuit damage caused by over-voltages.

In summary, the CMUDM8004 TR is a type of single MOSFET transistor designed for applications such as voltage controlled resistors, switches, amplifiers and linear circuits that require high switching speeds and low output impedances. The device features excellent linearity and avalanche breakdown protection, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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