CXDM1002N TR Discrete Semiconductor Products

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The CXDM1002N TR is a two-terminal, single-gate field-effect transistor (FET) designed for use in various RF and broadcast applications. It is manufactured by CXD Technologies and is based on their proprietary advanced field effect transistor (FET) process technology. The CXDM1002N TR is featured with advanced power switched amplifiers, oscillators, mixers and filtering applications. This article is written to provide a brief introduction about the application field and working principle of the CXDM1002N TR.

The application field of the CXDM1002N TR comprises of RF power amplifiers, oscillators, mixers, filters, amplifiers and wideband applications in the frequency range from 9 kHz to 1000 MHz. It is mainly used in general radio frequency (RF) communication and broadcast relevant areas, such as wireless LAN, automotive, marine and industrial applications. The CXDM1002N TR has excellent isolation and input impedance, small gate capacitance and low insertion loss, making it suitable for use in any communication or broadcast system.

The CXDM1002N TR is made using advanced process technology by CXD Technologies. It adopts a structure of two devices (source and drain) placed between a gate. The source and drain electrodes are made of heavily doped silicon, providing excellent electrical isolation between them. The gate is made with a single layer of silicon oxide, which restricts the current flow between the source and drain electrodes. This device also features a wide gate voltage range, allowing for maximum efficiency and power control.

The working principle of the CXDM1002N TR is based on the field effect principle, which states that when a voltage is applied to the gate electrode, the channel between the source and drain will become narrower. When the channel is narrow, the current flow between the source and drain is significantly reduced. As the voltage across the gate electrode is increased, the channel will become even narrower and the current flow through the device will be further reduced.

The CXDM1002N TR has a high breakdown voltage and excellent charge-transfer characteristics, making it suitable for use in RF and broadcast systems. Furthermore, its low gate capacitance and reduced gate-source resistance provide a lower noise level and improved overall system performance. The CXDM1002N TR is capable of providing a wide range of devices by its various combinations of source, drain and gate electrodes. As such, it is used in a wide range of applications such as RF power amplifiers, oscillators, mixers, filters, amplifiers and wideband applications.

In conclusion, the CXDM1002N TR is a single-gate field-effect transistor designed for various RF and broadcast applications. It is based on CXD Technologies proprietary process technology, which makes it suitable for applications from 9 kHz to 1000 MHz. Its excellent electrical isolation and high breakdown voltage, combined with its low gate capacitance and reduced gate-source resistance, make it suitable for many applications in the field of RF and broadcast communication. It is an ideal choice for wireless LAN, automotive, marine and industrial applications.

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