CXDM4060N TR Discrete Semiconductor Products |
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Allicdata Part #: | CXDM4060NTR-ND |
Manufacturer Part#: |
CXDM4060N TR |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET N-CH 40V 6A SOT-89 |
More Detail: | N-Channel 40V 6A (Ta) 1.2W (Ta) Surface Mount SOT-... |
DataSheet: | CXDM4060N TR Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.28256 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 730pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-89 |
Package / Case: | TO-243AA |
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CXDM4060N TR is a kind of insulated gate field-effect transistor (IGFET) with wide application field. It is a Metal–oxide–semiconductor field-effect transistor (MOSFET) specifically optimized for use in radio frequency (RF) power amplifier and mixer applications. This type of transistor is suitable for the frequency range of applications from 50 MHz to over 6 GHz. This type of transistor typically possesses low power input, provides high output power, and exhibits excellent linearity and low distortion.
The transistor is usually composed of four parts, namely the source region (S) for input signal, the gate region (G) for controlling current, the drain region (D) for output signal and the substrate (B) for mounting and grounding. The source, gate and drain regions are high-impedance regions, which are separated from the electrically conductive regions by a thin insulating layer made of silicon dioxide.
The most important working principle of this transistor is the controlling of current flow. The gate region of the transistor is a high-impedance region, controlled by the voltage applied at the gate terminal of the device. When positive voltage is applied at the gate, the drain current is increased, and when negative voltage is applied at the gate, the drain current is decreased. This method of controlling current with gate voltage is called gate-source modulation.
The transistor is used in many types of electronic circuits such as audio amplifiers, video amplifiers, analog signal mixers, programmable logic controllers (PLCs) and radio frequency (RF) power amplifiers. In audio amplifiers, CXDM4060N TR is used to amplify and control small signals, as it can provide low distortion and linearity. In video amplifiers, it is used to amplify larger signals. Furthermore, in PLCs and RF power amplifiers, it is used to provide high gain and low distortion.
CXDM4060N TR also has numerous advantages. It provides high output power and low power input, low noise, low distortion, and low power consumption. Moreover, these transistors are reliable, have good frequency response, are relatively inexpensive and are highly efficient.In conclusion, CXDM4060N TR is a great transistor with multiple applications, such as audio and video amplifiers, analog radio mixers, radio frequency power amplifiers, and programmable logic controllers. It is easy to use and provides excellent results. It provides high output power, low power input, low noise, low distortion and low power consumption. With its great features and widespread applications, CXDM4060N TR is an excellent choice for any electronic application.
The specific data is subject to PDF, and the above content is for reference
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