CXDM6053N TR Allicdata Electronics

CXDM6053N TR Discrete Semiconductor Products

Allicdata Part #:

CXDM6053NTR-ND

Manufacturer Part#:

CXDM6053N TR

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: MOSFET N-CH 60V 5.3A SOT-89
More Detail: N-Channel 60V 5.3A (Ta) 1.2W (Ta) Surface Mount SO...
DataSheet: CXDM6053N TR datasheetCXDM6053N TR Datasheet/PDF
Quantity: 1000
1000 +: $ 0.30429
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V
Vgs (Max): 20V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 30V
FET Feature: --
Power Dissipation (Max): 1.2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA
Description

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The CXDM6053N TR is a Field Effect Transistor (FET) that is widely used across various application fields. It is a N-Channel Enhancement mode MOSFET and due to its high-density architecture, it offers superior performance and reliability compared to other similar devices. The CXDM6053N TR can be used in various circuit configurations such as discrete, monolithic, and integrated circuits.

This particular device has two distinct application fields: digital logic and power conversion. When used in digital logic applications, the CXDM6053N TR provides an efficient way to switch between high and low voltage levels. It has low input capacitance and better switching speed compared to non-FETs. This makes it ideal for applications that require fast logic switching, such as computer processors and FPGAs.

In power conversion applications, the CXDM6053N TR can be used as a high-side switch between voltage sources, which makes it ideal for power supply applications. It can also be used in high current and high voltage power supply applications for its high current rating, low threshold voltage and low on resistance.

The working principle of the CXDM6053N TR is based on the principle of MOSFETs, which are semiconductor transistors that use a metal oxide semiconductor (MOS) as a gate dielectric layer between the source and drain electrodes. The gate of a MOSFET is supplied with a gate voltage (Vgs) which controls the flow of current between the source and drain. When a positive gate voltage is applied, the transistor is in the conducting state, allowing current to flow between the source and drain. On the other hand, if the gate voltage is negative or zero, the transistor is in the cut-off state, blocking current flow between the source and drain.

The CXDM6053N TR is a single-channel device, meaning it is just one transistor and it can only be used in one circuit. It is usually used as a switch, with the control voltage (Vgs) used to control whether or not the transistor is in a conducting state. This device is most commonly used in digital logic and power supply applications, but can also be used in other applications that require a fast switching device.

In conclusion, the CXDM6053N TR is a N-channel enhancement mode MOS FET that is widely used in digital logic and power conversion applications. It has a low input capacitance, fast switching speed, and low on resistance, making it ideal for applications that require a fast switching circuit.

The specific data is subject to PDF, and the above content is for reference

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