CXDM3069N TR Discrete Semiconductor Products |
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| Allicdata Part #: | CXDM3069NTR-ND |
| Manufacturer Part#: |
CXDM3069N TR |
| Price: | $ 0.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Central Semiconductor Corp |
| Short Description: | MOSFET N-CH 30V 6.9A SOT-89 |
| More Detail: | N-Channel 30V 6.9A (Ta) 1.2W (Ta) Surface Mount SO... |
| DataSheet: |  CXDM3069N TR Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.27821 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 6.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Vgs (Max): | 12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1.2W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-89 |
| Package / Case: | TO-243AA |
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The CXDM3069N TR is a high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in applications such as analog or digital control and measurement, amplifiers, and power management. This unique FET (Field Effect Transistor) has a built-in charge pump that eliminates the need for a gate driver and reduces the cost of input circuitry.
The CXDM3069N TR has a maximum drain-source current of 60 amps, which enables high power-density designs. This FET also features a low drain-source on-resistance of 63 mΩ when operating at 4.5V. The fast switching times and low gate-source capacitance of this device enable designs that offer high speed and efficiency, which makes them ideal for use in a wide range of applications.
The CXDM3069N TR is designed to operate in both inverting and non-inverting logic circuits, and it offers an extremely low level of distortion. This FET also has an integrated protection circuit, which helps to protect against latch-up and overvoltage. The device is also compatible with a range of power supplies, and it is ideal for controlling complex switching circuits.
The working principle of the CXDM3069N TR is based on field effect technology. When a voltage is applied to the FET\'s gate, an electric field is created in the transistor\'s drain-source region. This field creates a high resistance and reduces the current flowing through the device. By controlling the voltage applied to the gate, the resistance in the transistor can be varied and the current through the transistor can be controlled.
The CXDM3069N TR is a versatile device that can be used in a range of applications, such as analog control and measurement, amplifiers, and power management. This type of FET is also ideal for high speed, high efficiency designs and it is compatible with a variety of power supplies. With its superior performance and cost-efficiency, the CXDM3069N TR is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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