CY14B101I-SFXIT Allicdata Electronics
Allicdata Part #:

CY14B101I-SFXIT-ND

Manufacturer Part#:

CY14B101I-SFXIT

Price: $ 5.34
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 1M I2C 3.4MHZ 16SOIC
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8...
DataSheet: CY14B101I-SFXIT datasheetCY14B101I-SFXIT Datasheet/PDF
Quantity: 1000
1000 +: $ 4.86014
Stock 1000Can Ship Immediately
$ 5.34
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: --
Memory Interface: I²C
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: CY14B101
Description

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Memory is an essential part of modern computer technology, and as such it plays an important role in computer applications. One of the key components of Memory are the CY14B101I-SFXIT memory storage devices. They are typically used in embedded systems and digital audio and video devices and applications.

The CY14B101I-SFXIT devices are single-bit Flash, non-volatile memory storage devices. Compared to regular DRAM, Flash does not require refreshing or applying power for data retention. This type of memory is extremely useful for embedded applications, such as in digital audio and video devices, where data retention is important, and also where space is limited.

The CY14B101I-SFXIT memory devices consist of an array of memory cells, organized into an array of columns and rows. Each row and column has its own address, allowing the device to read and write to the desired memory location. The memory cells are divided into two types; static and dynamic. Static memory cells are read-only and can only retain a single state of data. Dynamic memory cells can be written to and read from, allowing them to store more than one state of data.

The CY14B101I-SFXIT memory devices use a three-transistor cell (3T cell) array to increase the density of each cell. This allows much more data to be stored in a smaller space. Each 3T cell has a fixed threshold voltage, which is used to determine the logical state of the cell. The cell can either be in the "low" state or the "high" state, depending on the voltage applied to it.

When data is to be written to a 3T cell, the transistor gate is opened, allowing the electrons to pass through and change the threshold voltage. A write operation requires the correct voltage to be applied to the transistor gate, and the correct voltage to be applied to the drain. A read operation requires the correct voltage to be applied to the transistor to detect the threshold voltage for the cell.

The CY14B101I-SFXIT memory devices have many advantages over other types of memory, such as lower power consumption, high data transfer rates, and improved reliability. In addition, they are relatively inexpensive, making them perfect for high-volume applications. This makes them ideal for embedded systems and digital audio and video applications.

In conclusion, the CY14B101I-SFXIT memory devices are a reliable and cost-effective solution for embedded memory applications. With their high data transfer rates, low power consumption, and improved reliability, they are perfect for a wide range of applications. They are used in many areas, such as digital audio and video devices, industrial automation systems, and even wireless systems.

The specific data is subject to PDF, and the above content is for reference

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