CY14B101LA-SP45XI Allicdata Electronics
Allicdata Part #:

CY14B101LA-SP45XI-ND

Manufacturer Part#:

CY14B101LA-SP45XI

Price: $ 18.74
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 1M PARALLEL 48SSOP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8...
DataSheet: CY14B101LA-SP45XI datasheetCY14B101LA-SP45XI Datasheet/PDF
Quantity: 134
1 +: $ 18.74000
10 +: $ 18.17780
100 +: $ 17.80300
1000 +: $ 17.42820
10000 +: $ 16.86600
Stock 134Can Ship Immediately
$ 18.74
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Supplier Device Package: 48-SSOP
Base Part Number: CY14B101
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY14B101LA-SP45XI is an advanced flash memory from Cypress Semiconductor. It is a 2.2V 3V 5V Flash Memory Device which provides an ideal data storage solution for applications that require fast and reliable read and write operations. It has a large array architecture and features a 2-Mbyte capacity, making it suitable for applications requiring large amounts of code and data storage.

The CY14B101LA-SP45XI flash memory can be used in a variety of different applications. It is ideal for use as a data storage solution in embedded systems, as well as a content storage solution in consumer electronics such as digital cameras, PDAs, MP3 players, and portable gaming devices. The device also offers high speed read and write operations which make it suitable for applications that require high levels of data persistence.

The CY14B101LA-SP45XI flash memory is composed of four components. The device includes the LPC54021, an 8-bit microcontroller, an 8Kbyte SRAM, and the CY14B101LA-SP45XI Flash memory. The device also contains two additional components, the FPGA, which is used for signal processing, and the 8-bit CMOS encoder/decoder, which is used for signal decoding.

The working principle of the CY14B101LA-SP45XI, like most flash memory devices, is based on a erase/program cycle. When a cell is moved from one state to the other, an erasure has to be performed first. After that, the programmed value is then written back into the cell. The device can also perform additional erase/program cycles, if needed for cooler operation or more durable data storage.

The CY14B101LA-SP45XI flash memory utilizes a Multi-Level Cell (MLC) technology. This technology enables the device to store more data on the same cell as compared to other types of flash memory. This allows the device to store more information in less space and hence makes it ideal for applications that require large amounts of code and data storage.

The CY14B101LA-SP45XI flash memory provides the highest density in its class, with up to 4 Mbits of raw data storage in a single chip. It also features fast read and write speeds, capable of achieving reads of up to 15Mb/second. Furthermore, its large array architecture allows for an extendable address space, enabling the device to be used for large storage requirements.

In summary, the CY14B101LA-SP45XI Flash Memory Device is a powerful and reliable data storage solution that is suitable for a wide range of applications. It offers high speed read and write operations, a large array architecture and a high capacity. It is ideal for applications that require large data storage requirements, fast read and write speeds, and stable performance.

The specific data is subject to PDF, and the above content is for reference

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