CY14E256LA-SZ25XI Allicdata Electronics
Allicdata Part #:

428-3622-5-ND

Manufacturer Part#:

CY14E256LA-SZ25XI

Price: $ 13.14
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 256K PARALLEL 32SOIC
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: CY14E256LA-SZ25XI datasheetCY14E256LA-SZ25XI Datasheet/PDF
Quantity: 35
1 +: $ 13.14000
10 +: $ 12.74580
100 +: $ 12.48300
1000 +: $ 12.22020
10000 +: $ 11.82600
Stock 35Can Ship Immediately
$ 13.14
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 32-SOIC
Base Part Number: CY14*256
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY14E256LA-SZ25XI falls into the category of Memory. This series of four kilobit nonvolatile ferroelectric random access memory (F-RAM) devices is nonvolatile, electrically erasable and uses low power. It provides an ideal data logging and code storage solution for many embedded applications. These F-RAM devices are FRAM devices in the memory category and offer many advantages over other alternatives.

The CY14E256LA-SZ25XI has fast read and write access time and infinite write endurance, meaning that it can operate at higher speeds than other forms of nonvolatile memory, while maintaining data integrity. It also boasts high speed random data access and fast write access. In addition to these features, the F-RAM, being a high-end device, has extraordinary data retention and a wide operating temperature range of -40°C to 85°C.

The CY14E256LA-SZ25XI work principle is based on the ferroelectric effect. This principle is based on the behavior of a ferroelectric material that has the ability to become polarized when a small electric field is applied to it. The orientation of the field determines the polarized state of the material, and the F-RAM cells in the CY14E256LA-SZ25XI stores one bit of data at each cell. The device is designed with a process that allows the material to be manipulated to store data as either binary 1 or 0.

The application field of the CY14E256LA-SZ25XI is quite wide, ranging from in industrial and automotive applications to medical devices and equipment. As mentioned before, the F-RAM is ideal for data logging, which can be used in metering, instrumentation, energy management and data communication applications. As the devices are nonvolatile, they are suitable for retention of data even when the system is switched off or in power down mode. Additionally, its low power consumption means that the device is extremely efficient and long lasting.

The CY14E256LA-SZ25XI is an ideal choice for a wide range of applications due to its low power, fast read and write access, wide temperature range and infinite write endurance. Its excellent data retention, high density, low power and stable operation make it very suitable for embedded applications where It is often used to store critical system data, configuration information or even code for the application.

The specific data is subject to PDF, and the above content is for reference

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