CY14B104L-ZS20XI

CY14B104L-ZS20XI Application Field and Working Principle

The CY14B104L-ZS20XI is a high frequency, low power synchronous SRAM specifically designed for applications that require increased bandwidth, high speed, and compatibility with standard memory devices. It is suitable for use in a wide variety of embedded devices, including DSPs, FPGAs, microcontrollers, and converters.

The CY14B104L-ZS20XI allows for 8-bit, 4-word burst operation, providing speeds up to 104 MHz, and it is available in two low power versions. The CY14B104L-ZS20XI memory device operates from a single 3.3V supply and its recommended operating range is from 2.0 to 3.6V. The CY14B104L-ZS20XI is available in a 2.5V version, with a recommended operating range from 1.65V to 3.3V.

The SRAM core of the CY14B104L-ZS20XI is based on a four-word burst architecture. The burst length can be varied from one word to four words in translation mode, and from one word to 16 words in back-to-back mode. The four-word burst can be used for lower power operation. Additionally, the SRAM features an externally programmable output driver strength, wide data masking options, and phase-locked loop (PLL) support.

The CY14B104L-ZS20XI provides a total of 512 Kbits of RAM. It is offered in both full-wing and fly-by wire implementations. The full-wing data bus provides 1024 address lines and four control lines. The fly-by-wire implementation allows the user to access individual bytes of data. The data lines of the CY14B104L-ZS20XI also allows for an optional extended address feature.

The CY14B104L-ZS20XI also provides an integrated self-refresh feature that can be used to improve system power consumption. With self-refresh, the device can be powered down during periods of low activity, allowing for further power savings. The SRAM includes an integrated write back feature that allows for data to be written to memory without the need for an external write operation.

Overall, the CY14B104L-ZS20XI is an excellent memory option for a wide range of embedded applications. Its 8-bit, 4-word burst operation, programmable output driver strength, wide data masking options, and PLL support make the device ideal for high frequency and low power applications.