CY14B256Q1A-SXIT Allicdata Electronics
Allicdata Part #:

CY14B256Q1A-SXIT-ND

Manufacturer Part#:

CY14B256Q1A-SXIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 256K SPI 40MHZ 8SOIC
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: CY14B256Q1A-SXIT datasheetCY14B256Q1A-SXIT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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CY14B256Q1A-SXIT Application Field and Working Principle

The CY14B256Q1A-SXIT is a type of memory based on nonvolatile flash technology. It is used in consumer electronics, automotive, industrial, computer and communications applications. It provides nonvolatile, low-latency, low-cost, and high-performance data storage solutions.

The CY14B256Q1A-SXIT provides a 256Mbit density memory solution with a maximum capacity of up to 256MB. It is designed to operate at a frequency range of 66MHz to 133MHz and provides a maximum input data rate of up to 533MB/s. It requires a 2.5V core voltage, a 3.3V I/O voltage, and can operate at temperatures between 0°C and 50°C.

The CY14B256Q1A-SXIT supports multiple interface standards such as PCs, PCI Express, and SmartCard. It is backward compatible with some older memory interfaces such as SDRAM and DDRAM. The CY14B256Q1A-SXIT supports legacy PC platforms as well as the latest high-speed bus interfaces. It also features a high level of reliability, with a write endurance of up to 100,000 erasable/reprogrammable cycles.

The working principle of CY14B256Q1A-SXIT memory relies on the physics concept of charge transfer. After applying a voltage to a dielectric layer, the electrons are transferred between two electrodes, which are separated by either an SOI (Silicon On Insulator) or a combination of an oxide layer and a metal layer. This creates a ‘floating gate’ which stores a digital 0 or 1 by varying the amount of charge stored. The information is retained even when the device is not powered, making it a non-volatile memory.

The CY14B256Q1A-SXIT offers faster data access speed, higher endurance, and lower cost compared to other non-volatile memories. It is suitable for use in applications including edevices, portable navigation systems, security systems, avionics, medical systems, and consumer electronics.

The CY14B256Q1A-SXIT provides higher reliability, smaller size, and lower power consumption compared to other non-volatile memories. Its higher levels of power savings give it a competitive edge over other memory systems and make it a preferred choice in embedded applications that are sensitive to power consumption. Additionally, it has a wide temperature range, making it suitable for operation in harsh environments such as automotive and industrial applications.

In summary, the CY14B256Q1A-SXIT is a highly reliable, low-latency, low-cost, high-performance non-volatile memory with multiple interface standards and a wide operating temperature range. It is suitable for a range of different applications, from everyday consumer electronics devices to demanding industrial applications. Its fast read/write speed, high endurance, and low power consumption make it a preferred choice for embedded applications.

The specific data is subject to PDF, and the above content is for reference

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