
Allicdata Part #: | CY14E256L-SZ35XI-ND |
Manufacturer Part#: |
CY14E256L-SZ35XI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 256K PARALLEL 32SOIC |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 35ns |
Access Time: | 35ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 32-SOIC |
Base Part Number: | CY14*256 |
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CY14E256L-SZ35XI is a kind of memory, specifically Flash Memory. It is widely used in various data processing and storage applications. This memory provides a high-speed data storage and retrieval solution for residential, commercial and industrial applications. It provides non-volatile memory space for multiple application fields, such as embedded computing, industrial controllers, medical devices, etc. As a result, it is a preferred choice for embedded memory applications.
The working principle of CY14E256L-SZ35XI is based on Floating Gate Charge Storage Technology. This technology uses two electrically isolated gates, a control gate and a floating gate, to store charge. When a voltage is applied to the control gate, it creates an electric field that moves the charge onto the floating gate. This charge will remain stored on the floating gate until it is removed by applying a voltage to the control gate. This allows the memory to remain unchanged even when power is removed, ensuring the data remains safely stored.
CY14E256L-SZ35XI offer multiple advantages when compared to other Flash Memory, such as greater density, improved reliability, reduced power requirements, and higher speeds. This type of memory is capable of storing 32Mbyte of memory, which is much more than the 8Mbyte of most other Flash Memory. Additionally, it offers improved read/write speeds. The CY14E256L-SZ35XI is also characterized by high reliability and better manufacturing consistency. This is due to the use of Floating Gate Charge Storage Technology, which allows for better charge storage and less variability between chips.
CY14E256L-SZ35XI also provides a low power operation, as the memory does not require an external power connection. This is due to the non-volatile nature of the Floating Gate Charge Storage Technology. As this technology does not require the continuous presence of power, it ensures that the data is safely stored even when power is not present. Additionally, the memory is capable of operating at 3.3V and 2.5V, which reduces the nanowattage.
The floating gate charge storage technology employed in CY14E256L-SZ35XI provides flexibility in manufacturing and the ability to produce memory with a wider range of capabilities. Additionally, the integration of a non-volatile memory element on a logic chip can be accomplished with this technology, allowing for greater flexibility when designing integrated circuits. The combination of these features makes CY14E256L-SZ35XI an ideal choice for various embedded applications and data storage needs, such as medical devices, industrial controllers, and embedded computing.
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