CY14B104L-BA20XC Allicdata Electronics
Allicdata Part #:

CY14B104L-BA20XC-ND

Manufacturer Part#:

CY14B104L-BA20XC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: CY14B104L-BA20XC datasheetCY14B104L-BA20XC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B104
Description

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CY14B104L-BA20XC memory is a type of nonvolatile static random access memory (SRAM). It is commonly used for applications such as embedded systems, automotive, and other industrial control applications. The chip is fabricated using a 0.35 μm CMOS process and packaged using a 32 pin QFN package.

CY14B104L-BA20XC memory has many features that make it attractive for various applications. It has a maximum operating temperature of 125°C, making it suited for very high temperature applications. Additionally, the chip is in-system programmable, meaning it can be programmed directly in the system and does not need to be removed for programming.

CY14B104L-BA20XC memory is also very low power and has an extremely fast access time of 10 ns. It is also non-volatile, meaning it will retain its data even when the power is off. The chip provides a storage capacity of 8Mbits, making it capable of storing large amounts of data.

The working principle of CY14B104L-BA20XC memory is based on the properties of transistors. A transistor is a three-terminal device which can be used to control the flow of current between two other terminals. When two of these terminals are connected, current can flow through the transistor in either direction. When a third terminal, known as the control terminal, is connected to voltage, the transistor\'s state is changed, allowing for manipulation of the current between the other two terminals.

In CY14B104L-BA20XC memory, the two main terminals connected to the transistors are known as the bit line and the word line. The bit line is connected to an address line and the word line is connected to data lines. When a logic signal is applied to the control terminal, the current between the bit line and the word line is either enabled or inhibited depending on the polarity of the signal.

As a result, when the word line is activated, the data strored in the cell is read. To write data to the cell, the logic signal\'s polarity is reversed and the data is written on to the cell. As all cells in the memory are connected, a single write operation to a specified address can write data to all of the cells, thus enabling faster data transfer.

CY14B104L-BA20XC memory is an excellent choice for applications that require high speed, low power consumption, and high temperatures. It is ideal for embedded systems, automotive, and industrial control applications due to their fast access time and low power consumption. Additionally, its non-volatile nature ensures that data is retained even when the power is off.

The specific data is subject to PDF, and the above content is for reference

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