CY14B104L-BA20XCT Allicdata Electronics
Allicdata Part #:

CY14B104L-BA20XCT-ND

Manufacturer Part#:

CY14B104L-BA20XCT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: CY14B104L-BA20XCT datasheetCY14B104L-BA20XCT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B104
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY14B104L-BA20XCT is a type of memory device used in a variety of applications. It is a non-volatile static random access memory (SRAM) chip with a storage capacity of up to 4,096 bits. The chip utilizes an advanced block erase and lock-up technique to ensure data retention and reliability. It is ideal for projects requiring low power consumption and a small footprint.

The CY14B104L-BA20XCT has a wide range of potential applications. It can be used in a variety of consumer products such as digital cameras and MP3 players. It is also often used in embedded applications such as consumer electronics, industrial automation systems, and automotive electronics. In addition, it is suitable for applications such as data logging and real-time clocks, as it offers both low power consumption and a low footprint.

The CY14B104L-BA20XCT works on the basis of non-volatile static random access memory. This type of memory is a type of memory device that stores data in an array of cells and can be read and written randomly. Data can be stored in and retrieved from the memory without further input to the system. Non-volatile SRAM devices like the CY14B104L-BA20XCT do not require power to retain information, allowing the system to continue operating even when the power is off.

The CY14B104L-BA20XCT utilizes an advanced block erase and lock-up technique to ensure data retention and reliability. This technique makes use of a contact layer to create a low power switch. When the system needs to erase data, it uses electrical pulses to break the contact and erase the memory block. This technique also helps protect the memory from damage due to electrical noise and other events that could cause data corruption.

In addition to its outstanding data retention characteristics, the CY14B104L-BA20XCT is designed for low power consumption. Its low standby power consumption helps save energy and its low power consumption during operations helps increase system efficiency. Its small footprint also helps reduce the cost and complexity of the overall system design.

The CY14B104L-BA20XCT is an ideal choice for a wide range of applications requiring low power consumption and a small footprint. Its advanced block erase and lock-up technique ensures reliable data retention and its low power consumption makes it suitable for a variety of applications. It is ideal for projects requiring both data logging and real-time clock functionalities, as well as embedded applications such as consumer electronics, industrial automation systems, and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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