CY14B104L-BA45XI Allicdata Electronics
Allicdata Part #:

CY14B104L-BA45XI-ND

Manufacturer Part#:

CY14B104L-BA45XI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: CY14B104L-BA45XI datasheetCY14B104L-BA45XI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B104
Description

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CY14B104L-BA45XI is a Parallel FIFO memory that is most commonly used in data communications networks and consumer electronic product applications. It is a device that has a Wide Data Bus Interface for consumer electronic products and data communications networks. The FIFO memory is made of four independent circuits, with each circuit having a distinct purpose and assigned a priority level. The device has a low power design, a large data bus interface, and is cost-effective.

The CY14B104L-BA45XI can be used for many applications. It is used in high-speed data communications, consumer electronics, and network appliance designs. It can also be used in embedded systems and computer peripherals. The device is also used in asynchronous and synchronous data transmission systems.

The working principle of the CY14B104L-BA45XI is based on four independent circuits. Each circuit has a different purpose and is assigned a separate priority level. All four circuits are connected to each other via a data bus interface.

The first circuit is a DRAM interface and is responsible for transferring data from memory to the FIFO memory. The second circuit is an NV RAM and is used for managing the FIFO Memory. The third circuit is an SRAM and is responsible for storing the FIFO data. Finally, the fourth circuit is a control logic and is responsible for transferring the data from the FIFO memory to the DRAM.

The DRAM interface is responsible for controlling the data flow from the DRAM to the FIFO memory. The interface is responsible for transferring the data from memory to the FIFO memory. It also ensures that the data is formatted properly and that it is transferred in the correct way.

The NV RAM manages the FIFO memory and is responsible for reading and writing the FIFO memory. It keeps track of the data to be read and written and can be used to control the flow of data between the FIFO memory and the DRAM.

The SRAM stores the FIFO data and provides fast access to the data in the FIFO memory. It also allows for storage of large amounts of data.

The control logic is responsible for controlling the transfer of information from the FIFO memory to the DRAM. It can be used to read and write information to the FIFO memory and is responsible for determining which data should be transferred from the FIFO memory to the DRAM.

In summary, the CY14B104L-BA45XI is a Parallel FIFO memory that is commonly used in data communications networks and consumer electronic products. Its four independent circuits are responsible for transferring data from memory to the FIFO memory, managing the FIFO memory, storing the FIFO data, and controlling the transfer of data from the FIFO memory to the DRAM.

The specific data is subject to PDF, and the above content is for reference

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