CY14B104N-BA20XC Allicdata Electronics
Allicdata Part #:

CY14B104N-BA20XC-ND

Manufacturer Part#:

CY14B104N-BA20XC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 1...
DataSheet: CY14B104N-BA20XC datasheetCY14B104N-BA20XC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B104
Description

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Memory is the most critical component of any computing system. Storage and retrieval of data in a computer system is done using memory. Memory can take various forms such as RAM, ROM and NVRAM. CY14B104N-BA20XC is a type of non-volatile RAM (NVRAM) which is becoming an increasingly popular choice among memory users.

CY14B104N-BA20XC is a single-bit NVRAM device with a 64-Kbit capacity.It is available in both the 3.0V and 5V operating voltage range. It has an endurance rating of 1 million cycles and features a data retention time of 75 years. It is manufactured using CMOS technology, making it highly reliable and power efficient.

The CY14B104N-BA20XC device is suitable for use in many different applications, from automotive electronics to medical equipment. It is often used in applications such as data buffering and storage, as well as for storing firmware and configuration settings. In automotive applications, it is especially useful for storing pre-calibrated settings and to help conserve energy.

The application field and working principle of CY14B104N-BA20XC can be further explored. Its working principle is based on a single sense-amplifier coupled to four latches. The single-bit device operates in two modes: write and read. In the write mode, the data (High or Low) is written to the latches. In the read mode, the state of the data on the latches is read out and output as logic High or Low. The device has a standby current of 5 µA and a typical current consumption of only 500 µA for the write operation.

The CY14B104N-BA20XC offers many advantages over other NVRAM solutions. It requires no external refresh and utilizes an ultra-low power sleep state that helps save power and extend battery life. This can be especially beneficial for embedded and portable applications. Furthermore, its high data retention time of 75 years and endurance rating of 1 million cycles make it highly reliable. This makes it suitable for use in critical applications that require data and settings to be retained over a long period.

In conclusion, the CY14B104N-BA20XC is a single-bit memory device that offers a number of benefits over other NVRAM solutions. It is suitable for use in a variety of applications and especially useful for automotive, medical and embedded applications. Because of its high data retention time, reliability and low power consumption, it is becoming an increasingly popular choice for demanding applications.

The specific data is subject to PDF, and the above content is for reference

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